Publication Information

{'id': 'https://openalex.org/W2002720490', 'doi': 'https://doi.org/10.1049/el.2013.0319', 'title': 'Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering', 'display_name': 'Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering', 'publication_year': 2013, 'publication_date': '2013-03-01', 'ids': {'openalex': 'https://openalex.org/W2002720490', 'doi': 'https://doi.org/10.1049/el.2013.0319', 'mag': '2002720490'}, 'language': 'en', 'primary_location': {'is_oa': True, 'landing_page_url': 'https://doi.org/10.1049/el.2013.0319', 'pdf_url': 'https://onlinelibrary.wiley.com/doi/pdfdirect/10.1049/el.2013.0319', 'source': {'id': 'https://openalex.org/S149016011', 'display_name': 'Electronics Letters', 'issn_l': '0013-5194', 'issn': ['0013-5194', '1350-911X'], 'is_oa': True, 'is_in_doaj': True, 'is_core': True, 'host_organization': 'https://openalex.org/P4310311714', 'host_organization_name': 'Institution of Engineering and Technology', 'host_organization_lineage': ['https://openalex.org/P4310311714'], 'host_organization_lineage_names': ['Institution of Engineering and Technology'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': True, 'oa_status': 'bronze', 'oa_url': 'https://onlinelibrary.wiley.com/doi/pdfdirect/10.1049/el.2013.0319', 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5013366818', 'display_name': 'Huiseong Han', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I114531698', 'display_name': 'Tokyo Institute of Technology', 'ror': 'https://ror.org/0112mx960', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I114531698']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'H.S. Han', 'raw_affiliation_strings': ['Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan'], 'affiliations': [{'raw_affiliation_string': 'Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan', 'institution_ids': ['https://openalex.org/I114531698']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5111739849', 'display_name': 'Dae-Hee HAN', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I114531698', 'display_name': 'Tokyo Institute of Technology', 'ror': 'https://ror.org/0112mx960', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I114531698']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'D.H. Han', 'raw_affiliation_strings': ['Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan'], 'affiliations': [{'raw_affiliation_string': 'Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan', 'institution_ids': ['https://openalex.org/I114531698']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5090919175', 'display_name': 'Shun-ichiro Ohmi', 'orcid': 'https://orcid.org/0000-0002-3963-572X'}, 'institutions': [{'id': 'https://openalex.org/I114531698', 'display_name': 'Tokyo Institute of Technology', 'ror': 'https://ror.org/0112mx960', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I114531698']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'S. Ohmi', 'raw_affiliation_strings': ['Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan'], 'affiliations': [{'raw_affiliation_string': 'Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan', 'institution_ids': ['https://openalex.org/I114531698']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': {'value': 2200, 'currency': 'USD', 'value_usd': 2200, 'provenance': 'doaj'}, 'apc_paid': None, 'fwci': 1.101, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 12, 'citation_normalized_percentile': {'value': 0.787307, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 86, 'max': 87}, 'biblio': {'volume': '49', 'issue': '7', 'first_page': '500', 'last_page': '501'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T14117', 'display_name': 'Integrated Circuits and Semiconductor Failure Analysis', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10558', 'display_name': 'Advancements in Semiconductor Devices and Circuit Design', 'score': 0.9997, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/misfet', 'display_name': 'MISFET', 'score': 0.9796162}, {'id': 'https://openalex.org/keywords/electron-cyclotron-resonance', 'display_name': 'Electron cyclotron resonance', 'score': 0.5954944}], 'concepts': [{'id': 'https://openalex.org/C2778673556', 'wikidata': 'https://www.wikidata.org/wiki/Q210793', 'display_name': 'MISFET', 'level': 5, 'score': 0.9796162}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.7715541}, {'id': 'https://openalex.org/C166972891', 'wikidata': 'https://www.wikidata.org/wiki/Q5527011', 'display_name': 'Gate dielectric', 'level': 4, 'score': 0.60526025}, {'id': 'https://openalex.org/C175361016', 'wikidata': 'https://www.wikidata.org/wiki/Q245591', 'display_name': 'Electron cyclotron resonance', 'level': 3, 'score': 0.5954944}, {'id': 'https://openalex.org/C133386390', 'wikidata': 'https://www.wikidata.org/wiki/Q184996', 'display_name': 'Dielectric', 'level': 2, 'score': 0.5702203}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.529773}, {'id': 'https://openalex.org/C22423302', 'wikidata': 'https://www.wikidata.org/wiki/Q898444', 'display_name': 'Sputtering', 'level': 3, 'score': 0.51670694}, {'id': 'https://openalex.org/C82706917', 'wikidata': 'https://www.wikidata.org/wiki/Q10251', 'display_name': 'Plasma', 'level': 2, 'score': 0.49800086}, {'id': 'https://openalex.org/C61427134', 'wikidata': 'https://www.wikidata.org/wiki/Q847609', 'display_name': 'Sputter deposition', 'level': 4, 'score': 0.49533573}, {'id': 'https://openalex.org/C113196181', 'wikidata': 'https://www.wikidata.org/wiki/Q485223', 'display_name': 'Analytical Chemistry (journal)', 'level': 2, 'score': 0.33698213}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.3013906}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.26199865}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.1865919}, {'id': 'https://openalex.org/C145598152', 'wikidata': 'https://www.wikidata.org/wiki/Q176097', 'display_name': 'Field-effect transistor', 'level': 4, 'score': 0.15019938}, {'id': 'https://openalex.org/C19067145', 'wikidata': 'https://www.wikidata.org/wiki/Q1137203', 'display_name': 'Thin film', 'level': 2, 'score': 0.13103232}, {'id': 'https://openalex.org/C185592680', 'wikidata': 'https://www.wikidata.org/wiki/Q2329', 'display_name': 'Chemistry', 'level': 0, 'score': 0.11276746}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.100691915}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.058694214}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C43617362', 'wikidata': 'https://www.wikidata.org/wiki/Q170050', 'display_name': 'Chromatography', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': True, 'landing_page_url': 'https://doi.org/10.1049/el.2013.0319', 'pdf_url': 'https://onlinelibrary.wiley.com/doi/pdfdirect/10.1049/el.2013.0319', 'source': {'id': 'https://openalex.org/S149016011', 'display_name': 'Electronics Letters', 'issn_l': '0013-5194', 'issn': ['0013-5194', '1350-911X'], 'is_oa': True, 'is_in_doaj': True, 'is_core': True, 'host_organization': 'https://openalex.org/P4310311714', 'host_organization_name': 'Institution of Engineering and Technology', 'host_organization_lineage': ['https://openalex.org/P4310311714'], 'host_organization_lineage_names': ['Institution of Engineering and Technology'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}], 'best_oa_location': {'is_oa': True, 'landing_page_url': 'https://doi.org/10.1049/el.2013.0319', 'pdf_url': 'https://onlinelibrary.wiley.com/doi/pdfdirect/10.1049/el.2013.0319', 'source': {'id': 'https://openalex.org/S149016011', 'display_name': 'Electronics Letters', 'issn_l': '0013-5194', 'issn': ['0013-5194', '1350-911X'], 'is_oa': True, 'is_in_doaj': True, 'is_core': True, 'host_organization': 'https://openalex.org/P4310311714', 'host_organization_name': 'Institution of Engineering and Technology', 'host_organization_lineage': ['https://openalex.org/P4310311714'], 'host_organization_lineage_names': ['Institution of Engineering and Technology'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}, 'sustainable_development_goals': [{'display_name': 'Affordable and clean energy', 'id': 'https://metadata.un.org/sdg/7', 'score': 0.65}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 8, 'referenced_works': ['https://openalex.org/W1480979850', 'https://openalex.org/W1512740549', 'https://openalex.org/W2009094321', 'https://openalex.org/W2015742340', 'https://openalex.org/W2053784345', 'https://openalex.org/W2088609639', 'https://openalex.org/W2145633302', 'https://openalex.org/W2952272388'], 'related_works': ['https://openalex.org/W4327952330', 'https://openalex.org/W4317941477', 'https://openalex.org/W2971599279', 'https://openalex.org/W2930732853', 'https://openalex.org/W2908476896', 'https://openalex.org/W2900536338', 'https://openalex.org/W2088609639', 'https://openalex.org/W2064061471', 'https://openalex.org/W1863005981', 'https://openalex.org/W1812063061'], 'abstract_inverted_index': {'Electronics': [0, 31, 57, 83, 113, 139, 165], 'LettersVolume': [1], '49,': [2], 'Issue': [3], '7': [4], 'p.': [5], '500-501': [6, 1439], 'Semiconductor': [7], 'technologyFree': [8], 'Access': [9], 'Potential': [10], 'of': [11, 30, 37, 56, 63, 82, 89, 112, 119, 138, 145, 164, 171, 212, 222, 235, 246, 287, 299, 342, 351, 375, 411, 422, 442, 460, 473, 489, 542, 566, 597, 604, 630, 722, 739, 753, 768, 789, 794, 807, 818, 830, 841, 852, 916, 940, 1000, 1010, 1035, 1071, 1081, 1120, 1131, 1152, 1156, 1163, 1168, 1176, 1197, 1205, 1219, 1238, 1263, 1289, 1305, 1317, 1332, 1344, 1376, 1403, 1431], 'MISFET': [12, 1135], 'with': [13, 249, 271, 283, 345, 405, 447, 521, 545, 553, 570, 725, 763, 835, 855, 923, 1042, 1057, 1068, 1136, 1248, 1389], 'HfN': [14, 280, 346, 506, 546, 571, 652, 687, 726, 856, 924, 1043, 1065, 1137], 'gate': [15, 281, 347, 361, 383, 413, 470, 507, 547, 572, 653, 727, 857, 893, 925, 1044, 1066, 1138, 1292, 1393, 1411], 'dielectric': [16, 282, 362, 391, 418, 437, 449, 454, 471, 508, 548, 573, 654, 728, 926, 1045, 1067, 1139, 1240], 'formed': [17, 290, 509, 612, 620, 700, 1074, 1413], 'by': [18, 49, 75, 101, 131, 157, 183, 291, 496, 510, 601, 621, 657, 691, 701, 815, 989, 1075, 1126, 1414], 'ECR': [19, 658, 1076], 'plasma': [20, 293, 514, 659, 1077, 1418], 'sputtering': [21, 515, 660], 'H.S.': [22, 26, 104, 108], 'Han,': [23, 52, 105, 134, 1280], 'Corresponding': [24, 106], 'Author': [25, 107], 'Han': [27, 54, 109, 136], '[email protected]': [28, 110], 'Department': [29, 55, 81, 111, 137, 163], 'and': [32, 58, 84, 114, 140, 166, 210, 214, 226, 233, 252, 308, 319, 332, 394, 455, 480, 525, 540, 664, 706, 711, 743, 866, 877, 884, 931, 953, 958, 969, 979, 1013, 1032, 1090, 1101, 1114, 1160, 1170, 1173, 1180, 1244, 1250, 1286, 1320, 1347], 'Applied': [33, 59, 85, 115, 141, 167], 'Physics,': [34, 60, 86, 116, 142, 168], 'Tokyo': [35, 61, 87, 117, 143, 169, 1154], 'Institute': [36, 62, 88, 118, 144, 170, 1155], 'Technology,': [38, 64, 90, 120, 146, 172, 1157], 'J2-72,': [39, 65, 91, 121, 147, 173], '4259': [40, 66, 92, 122, 148, 174], 'Nagatsuta,': [41, 67, 93, 123, 149, 175], 'Midori-ku,': [42, 68, 94, 124, 150, 176], 'Yokohama,': [43, 69, 95, 125, 151, 177], '226-8502': [44, 70, 96, 126, 152, 178], 'JapanSearch': [45, 71, 97, 127, 153, 179], 'for': [46, 72, 98, 128, 154, 180, 370, 549, 555, 643, 674, 934, 1050, 1142, 1178, 1183, 1381], 'more': [47, 73, 99, 129, 155, 181], 'papers': [48, 74, 100, 130, 156, 182], 'this': [50, 76, 102, 132, 158, 184, 247, 534, 1184], 'authorD.H.': [51, 133], 'D.H.': [53, 135], 'authorS.': [77, 159], 'Ohmi,': [78, 160, 1408], 'S.': [79, 161], 'Ohmi': [80, 162, 1159], 'author': [103, 185], 'First': [186], 'published:': [187], '01': [188], 'March': [189], '2013': [190], 'https://doi.org/10.1049/el.2013.0319Citations:': [191], '12AboutSectionsPDF': [192], 'ToolsRequest': [193], 'permissionExport': [194], 'citationAdd': [195], 'to': [196, 218, 241, 388, 476, 804, 870, 903, 997, 1005, 1128], 'favoritesTrack': [197], 'citation': [198], 'ShareShare': [199], 'Give': [200], 'accessShare': [201, 204], 'full': [202], 'text': [203], 'full-text': [205, 220, 244], 'accessPlease': [206], 'review': [207], 'our': [208, 799], 'Terms': [209, 232], 'Conditions': [211, 234], 'Use': [213], 'check': [215], 'box': [216], 'below': [217, 240, 364, 613, 897], 'share': [219, 242], 'version': [221, 245], 'article.I': [223], 'have': [224, 416, 501, 1048], 'read': [225], 'accept': [227], 'the': [228, 238, 300, 325, 339, 359, 409, 435, 440, 452, 465, 484, 487, 511, 538, 550, 591, 595, 598, 608, 614, 665, 682, 686, 748, 756, 764, 795, 805, 808, 816, 836, 848, 853, 890, 892, 904, 935, 998, 1006, 1051, 1082, 1107, 1129, 1153, 1202], 'Wiley': [229], 'Online': [230], 'Library': [231], 'UseShareable': [236], 'LinkUse': [237], 'link': [239], 'a': [243, 258, 268, 277, 399, 469, 564, 567, 628, 732, 1054], 'article': [248], 'your': [250], 'friends': [251], 'colleagues.': [253], 'Learn': [254], 'more.Copy': [255], 'URL': [256], 'Share': [257], 'linkShare': [259], 'onFacebookTwitterLinked': [260], 'InRedditWechat': [261], 'Abstract': [262], 'A': [263], 'report': [264, 341, 537, 801], 'is': [265, 338, 812, 907], 'presented': [266, 936], 'on': [267, 580], 'Al/HfN/p-Si(100)': [269, 568, 723, 733, 754, 831, 1055], 'n-MISFET': [270, 326, 343, 544, 569, 724, 734, 837, 854, 917, 1036, 1056, 1108], 'excellent': [272, 518, 862, 1058], 'electrical': [273, 519, 1001, 1020, 1059, 1121, 1287], 'properties': [274, 520, 1021, 1060, 1122, 1288], 'that': [275, 421, 504, 793, 1061], 'inserts': [276, 1062], '4': [278, 650, 928, 1063], 'nm-thick': [279, 523, 651, 1064], 'equivalent': [284, 401], 'oxide': [285, 376, 402, 474, 1384], 'thickness': [286, 363, 377, 403], '0.7': [288, 769, 1072], 'nm': [289, 366, 770, 1073], 'electron-cyclotron-resonance': [292, 512], 'sputtering.': [294, 1078], 'The': [295, 305, 780, 859, 875, 943, 950, 1079, 1087, 1134, 1147], 'threshold': [296, 944], 'voltage': [297, 750, 945], '(Vth)': [298, 946], 'device': [301, 741, 860, 937, 1083], 'was': [302, 611, 637, 655, 669, 689, 771, 778, 786, 896, 947, 1084], '0.05': [303, 948, 1085], 'V.': [304, 874, 942, 949, 1086], 'on/off': [306, 951, 1088], 'ratio': [307, 952, 1089], 'subthreshold': [309, 905, 954, 1091], 'swing': [310, 955, 1092], 'at': [311, 624, 627, 641, 646, 661, 672, 938, 1093], 'W/L': [312, 1094], '=': [313, 329, 334, 575, 583, 730, 872, 919, 974, 986, 1038, 1095, 1111, 1116], '90': [314, 710, 920, 1039, 1096], 'µm/5': [315, 921, 1040, 1097], 'µm': [316, 1098], 'were': [317, 578, 619, 699, 709, 880, 956, 976, 1099], '∼103': [318, 957, 1100], '200': [320, 959, 1102], 'mV/dec.,': [321, 960, 1103], 'respectively.': [322, 714, 888, 961, 982, 1104], 'In': [323, 533, 962, 1105], 'particular,': [324], 'exhibits': [327, 861, 1109], 'IDS,sat': [328, 1110], '20.2': [330, 977, 1112], 'µA/μm': [331, 978, 1113], 'gm': [333, 1115], '20.5': [335, 980, 1117], 'mS/mm.': [336, 1118], 'This': [337, 811, 993], 'first': [340, 551, 1052], 'characteristics': [344, 829, 851, 868, 915, 933, 1034], 'dielectric.': [348, 858], 'Introduction': [349], 'Scaling': [350], 'CMOS': [352], 'technology': [353], 'in': [354, 372, 677, 717, 755, 773, 825, 911, 1019, 1027, 1246], 'recent': [355], 'years': [356], 'has': [357, 424, 493, 1140], 'reduced': [358], 'SiO2': [360, 423], '3': [365, 846], '[1].': [367], 'Major': [368], 'causes': [369, 457], 'concern': [371], 'further': [373], 'reduction': [374, 1009, 1130], 'include': [378], 'increased': [379], 'high': [380, 436, 994], 'direct': [381], 'tunnelling': [382], 'leakage': [384, 407, 527, 781, 894], 'current,': [385, 408, 782], 'which': [386, 415, 636], 'leads': [387, 996], 'questions': [389], 'regarding': [390], 'integrity,': [392], 'reliability': [393], 'standby': [395], 'power': [396], 'consumption.': [397], 'For': [398], 'small': [400, 776], '(EOT)': [404], 'low': [406, 448, 526], 'use': [410], 'high-k': [412, 453, 1239, 1390], 'dielectrics': [414, 463, 475], 'higher': [417], 'constant': [419, 450], 'than': [420, 792], 'been': [425, 494], 'required,': [426], 'such': [427], 'as': [428, 468], 'HfO2': [429, 1245], 'or': [430], 'HfSiON': [431], '[2,': [432], '3].': [433], 'Despite': [434], 'constant,': [438], 'however,': [439], 'formation': [441, 479], 'an': [443, 458, 543, 1017, 1069], 'interface': [444], 'layer': [445, 1204, 1315, 1374], '(IL)': [446], 'between': [451], 'silicon': [456], 'increase': [459], 'EOT.': [461], 'Nitride': [462], 'are': [464], 'candidate': [466], 'materials': [467], 'instead': [472], 'suppress': [477], 'IL': [478], 'oxygen': [481], 'vacancy.': [482], 'Among': [483], 'nitride': [485, 1349, 1378, 1392], 'dielectrics,': [486], 'synthesis': [488], 'nitrogen-rich': [490, 505], 'hafnium-nitride': [491], '(HfN)': [492], 'reported': [495, 503], 'several': [497], 'authors': [498, 1148], '[4-6].': [499], 'We': [500, 983, 1047], 'already': [502], '(ECR)': [513], 'method': [516], 'shows': [517, 563, 747, 847, 929], '0.6': [522], 'EOT': [524, 767, 1070], 'current': [528, 864, 895, 906, 967, 1200], 'using': [529, 590], 'hydrogen': [530], 'anneal': [531, 667], '[7].': [532, 822], 'Letter,': [535], 'we': [536], 'fabrication': [539, 560, 1015], 'characterisation': [541], 'time': [552, 1053], 'prospects': [554], 'future': [556, 1143], 'scaled': [557, 1144], 'devices.': [558, 1145], 'Device': [559, 1210], 'Fig.': [561, 745, 845, 927], '1a': [562], 'schematic': [565], '(Hf:N': [574, 729], '1:1.2).': [576], 'n-MISFETs': [577], 'fabricated': [579, 740], 'p-Si(100)': [581], '(NA': [582], '1': [584, 941], '×': [585, 632], '1015': [586, 633], 'cm−': [587, 634], '3)': [588], 'substrate': [589], 'gate-last': [592], 'process.': [593], 'After': [594], 'isolation': [596], 'active': [599], 'region': [600], 'local': [602], 'oxidation': [603], 'Si': [605, 1249], '(LOCOS)': [606], 'process,': [607, 1016], 'channel': [609, 991], 'stopper': [610], 'field': [615, 1386], 'oxide.': [616], 'Source/drains': [617], '(S/D)': [618], 'implanting': [622], 'PH3': [623], '20': [625], 'keV': [626], 'dose': [629], '5': [631, 712], '2,': [635], 'then': [638], 'subsequently': [639], 'activated': [640], '1000°C': [642], '2': [644, 746, 873], 'min': [645, 676], 'nitrogen': [647], 'ambient.': [648, 679], 'Then,': [649], 'deposited': [656], 'room': [662], 'temperature': [663], 'post-deposition': [666], '(PDA)': [668], 'carried': [670], 'out': [671], '400°C': [673], '30': [675], 'N2/4.9%H2': [678], 'When': [680], 'forming': [681], 'S/D': [683, 1011, 1132], 'contact': [684, 1247], 'holes,': [685], 'film': [688], 'etched': [690], '1%': [692], 'diluted-hydrofluoric': [693], 'acid': [694], '(DHF).': [695], 'Finally,': [696], 'aluminium': [697], 'electrodes': [698], 'evaporation.': [702], 'Channel': [703], 'width': [704], '(W)': [705], 'length': [707], '(L)': [708], 'µm,': [713], 'Fig': [715, 823, 909, 1025], '1Open': [716], 'figure': [718, 826, 912, 1028], 'viewerPowerPoint': [719, 827, 913, 1029], 'Schematic': [720], 'cross-section': [721], '1:1.2)': [731], 'structure': [735], 'b': [736], 'Microscope': [737, 839], 'image': [738, 840], 'Results': [742], 'discussion': [744], 'capacitance': [749], '(C-V)': [751], 'characteristic': [752], 'test': [757], 'element': [758], 'group': [759], '(TEG)': [760], 'processed': [761, 833], 'along': [762, 834], 'n-MISFET.': [765], 'An': [766], 'obtained': [772, 984], 'accumulation,': [774], 'although': [775], 'hysteresis': [777], 'observed.': [779], 'graphs': [783], 'not': [784], 'shown,': [785], 'one': [787], 'order': [788], 'magnitude': [790], 'lower': [791], 'MIS': [796, 842], 'diode': [797, 843], '(in': [798], 'previous': [800], '[7])': [802], 'due': [803], 'effect': [806, 817, 1387], 'LOCOS': [809, 819], 'edge.': [810], 'probably': [813], 'caused': [814], 'edge': [820], 'structures': [821], '2Open': [824], 'C-V': [828], 'MOSCAP': [832], 'Inset:': [838], 'TEG': [844], 'typical': [849], 'output': [850], 'drain': [863], 'saturation': [865, 876, 966], 'pinch-off': [867], 'up': [869], 'VD': [871, 939], 'linear': [878], 'mobility': [879], '32.4': [881], 'cm2/(V': [882, 886], 's)': [883], '63.5': [885], 's),': [887], 'At': [889], 'off-state,': [891], '0.1': [898], 'µA/μm.': [899], 'Therefore,': [900], 'its': [901], 'contribution': [902], 'negligible.': [908], '3Open': [910], 'ID-VD': [914], '(W/L': [918, 1037], 'µm)': [922, 1041], 'log(ID)-VG': [930], 'gm-VG': [932, 1033], 'addition,': [963], 'maximum': [964], 'drain–source': [965], '(IDS,sat)': [968], 'peak': [970], 'extrinsic': [971], 'transconductance': [972], '(gm': [973], 'dID/dVG)': [975], 'mS/mm,': [981], 'RS/D': [985], '36': [987], 'kΩμm': [988], 'gradual': [990], 'approximation.': [992], 'value': [995], 'degradation': [999], 'properties.': [1002], 'With': [1003], 'refinements': [1004, 1127], 'gate-to-channel': [1007], 'separation,': [1008], 'resistance': [1012], 'optimised': [1014], 'improvement': [1018], 'should': [1022, 1123], 'be': [1023, 1124], 'expected.': [1024], '4Open': [1026], 'Log-scale': [1030], 'ID-VG': [1031], 'Conclusion': [1046], 'demonstrated': [1049], 'Vth': [1080], 'paricular,': [1106], 'Improvement': [1119], 'expected': [1125], 'resistance.': [1133], 'potential': [1141], 'Acknowledgments': [1146], 'thank': [1149], 'H.': [1150], 'Ishiwara': [1151], 'T.': [1158, 1161], 'Suwa': [1162], 'Tohoku': [1164], 'University,': [1165], 'Y.': [1166], 'Jin': [1167], 'NTT': [1169], 'M.': [1171], 'Shimada': [1172], 'K.': [1174], 'Saito': [1175], 'MES-Afty': [1177], 'support': [1179], 'useful': [1181], 'discussions': [1182], 'research.': [1185], 'References': [1186], '1Lo,': [1187], 'S.H.,': [1188], 'Buchanan,': [1189], 'D.A.,': [1190], 'Taur,': [1191], 'Y.,': [1192], 'Wang,': [1193], 'W.:': [1194], "'Quantum-mechanical": [1195], 'modeling': [1196], 'electron': [1198, 1415], 'tunneling': [1199], 'from': [1201], 'inversion': [1203], 'ultra-thin-oxide': [1206], "nMOSFET's',": [1207], 'IEEE': [1208], 'Electron': [1209, 1354], 'Lett.,': [1211, 1254, 1296, 1397], '1997,': [1212], '18,': [1213], 'pp.': [1214, 1258, 1300, 1327, 1359, 1400, 1426], '209–': [1215], '211': [1216], '(https://doi/org/10.1109/55.568766)': [1217], 'CrossrefCASWeb': [1218, 1262, 1304, 1331], 'Science®Google': [1220, 1264, 1306, 1333, 1404, 1432], 'Scholar': [1221, 1265, 1307, 1334, 1364, 1405, 1433], '2Gutowski,': [1222], 'M.,': [1223, 1229], 'Jaffe,': [1224], 'J.E.,': [1225], 'Liu,': [1226], 'C.L.,': [1227], 'Stoker,': [1228], 'Hegde,': [1230], 'R.I.,': [1231], 'Rai,': [1232], 'R.S,': [1233], 'Tobin,': [1234], 'P.J.:': [1235], "'Thermodynamic": [1236], 'stability': [1237], 'metal': [1241, 1383], 'oxides': [1242], 'ZrO2': [1243], "SiO2',": [1251], 'Appl.': [1252, 1294, 1395], 'Phys.': [1253, 1295, 1396], '2002,': [1255, 1297], '80,': [1256], '(11),': [1257], '1897–': [1259], '1899': [1260], '(https://doi/org/10.1063/1.1458692)': [1261], '3Kang,': [1266], 'C.S.,': [1267], 'Cho,': [1268], 'H.J.,': [1269], 'Onishi,': [1270], 'K.,': [1271], 'Nieh,': [1272], 'R.,': [1273, 1275, 1336], 'Choi,': [1274], 'Gopalan,': [1276], 'S.,': [1277, 1279], 'Krishnan,': [1278], 'J.H.,': [1281], 'Lee,': [1282], 'J.C.:': [1283], "'Bonding": [1284], 'states': [1285], 'ultrathin': [1290], 'HfOxNy': [1291], "dielectrics',": [1293], '81,': [1298], '(14),': [1299], '2593–': [1301], '2595': [1302], '(https://doi/org/10.1063/1.1510155)': [1303], '4Becker,': [1308], 'J.S.,': [1309], 'Kim,': [1310], 'E.,': [1311], 'Gordon,': [1312, 1337, 1367], 'R.G.:': [1313], "'Atomic": [1314, 1373], 'deposition': [1316, 1343, 1375], 'insulating': [1318, 1377], 'hafnium': [1319, 1348], 'zirconium': [1321], "nitrides',": [1322], 'Chem.': [1323], 'Mater.,': [1324], '2004,': [1325], '16,': [1326], '3497–': [1328], '3501': [1329], '(https://doi/org/10.1021/cm049516y)': [1330], '5Fix,': [1335], 'R.G.,': [1338, 1368], 'Hoffmann,': [1339], 'D.M.:': [1340], "'Chemical": [1341], 'vapor': [1342], 'titanium,': [1345], 'zirconium,': [1346], 'thin': [1350], "films',": [1351], 'IEEE.': [1352], 'Trans.': [1353], 'Devices,': [1355], '1998,': [1356], '45,': [1357], '(3),': [1358], '680–': [1360], '690': [1361], '(https://doi/org/10.1109/16.661229)': [1362], 'Google': [1363], '6Kim,': [1365], 'K.H.,': [1366], 'Ritenour,': [1369], 'A.,': [1370], 'Antoniadis,': [1371], 'D.A.:': [1372], 'interfacial': [1379], 'layers': [1380], 'germanium': [1382], 'semiconductor': [1385], 'transistors': [1388], 'oxide/tungsten': [1391], "stacks',": [1394], '2007,': [1398], '90,': [1399], '212104-1–': [1401], '3Web': [1402], '7Han,': [1406], 'H.S.,': [1407], 'S.:': [1409], "'Hafnium-nitride": [1410], 'insulator': [1412], 'cyclotron': [1416], 'resonance': [1417], "sputtering',": [1419], 'IEICE': [1420], 'Electron.': [1421], 'Exp.,': [1422], '2012,': [1423], '9,': [1424], '(16),': [1425], '1329–': [1427], '1334': [1428], '(https://doi/org/10.1587/elex.9.1329)': [1429], 'CrossrefWeb': [1430], 'Citing': [1434], 'Literature': [1435], 'Volume49,': [1436], 'Issue7March': [1437], '2013Pages': [1438], 'FiguresReferencesRelatedInformation': [1440]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2002720490', 'counts_by_year': [{'year': 2021, 'cited_by_count': 3}, {'year': 2020, 'cited_by_count': 2}, {'year': 2019, 'cited_by_count': 1}, {'year': 2016, 'cited_by_count': 1}, {'year': 2015, 'cited_by_count': 2}, {'year': 2014, 'cited_by_count': 2}, {'year': 2013, 'cited_by_count': 1}], 'updated_date': '2024-12-15T18:28:59.451486', 'created_date': '2016-06-24'}