MISFET - AILBRY - Article Search

Results for 'MISFET' :

Tri-Gate Normally-Off GaN Power MISFET

Publication Year: 2012

DOI: https://doi.org/10.1109/led.2011.2179971

Abstract:

Authors:
- Bin Lu
- Elison Matioli
- Tomás Palacios
4H‐SiC MISFETs with nitrogen‐containing insulators

Publication Year: 2009

DOI: https://doi.org/10.1002/pssa.200925247

Abstract:

Authors:
- Masato Noborio
- Jun Suda
- Svetlana Beljakowa
- M. Krieger
- Tsunenobu Kimoto
A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_{{\text{T}}}/{f}_{\max}$ of 70/80 GHz

Publication Year: 2018

DOI: https://doi.org/10.1109/led.2018.2862158

Abstract:

Authors:
- Xinxin Yu
- Jianjun Zhou
- Chengjun Qi
- Zhengyi Cao
- Yuechan Kong
- Tangsheng Chen
Low interface state density AlN/GaN MISFETs

Publication Year: 1999

DOI: https://doi.org/10.1049/el:19991407

Abstract:

Authors:
- E. Alekseev
- A. Eisenbach
- D. Pavlidis
Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-<i>K</i>MISFET with p+poly-Si Gates -A Theoretical Approach

Publication Year: 2004

DOI: https://doi.org/10.1143/jjap.43.l1413

Abstract:

Authors:
- Kenji Shiraishi
- Keisaku Yamada
- Kazuyoshi Torii
- Y. Akasaka
- Kiyomi Nakajima
- Mitsuru KONNO
- Toyohiro Chikyow
- Hiroshi Kitajima
- T. Arikado
Over 20-GHz Cutoff Frequency Submicrometer-Gate Diamond MISFETs

Publication Year: 2004

DOI: https://doi.org/10.1109/led.2004.831200

Abstract:

Authors:
- H. Matsudaira
- Shingo Miyamoto
- Hiroaki Ishizaka
- Hitoshi Umezawa
- Hiroshi Kawarada
High Transconductance MISFET With a Single InAs Nanowire Channel

Publication Year: 2007

DOI: https://doi.org/10.1109/led.2007.902082

Abstract:

Authors:
- Q.T. Do
- K. Blekker
- I. Regolin
- W. Prost
- F.‐J. Tegude
Diamond MISFET based on boron delta-doped channel

Publication Year: 2008

DOI: https://doi.org/10.1016/j.diamond.2008.02.015

Abstract:

Authors:
- H. El-Hajj
- A. Denisenko
- A. Kaiser
- R.S. Balmer
- E. Kohn
Normally Off Single-Nanoribbon $\hbox{Al}_{2} \hbox{O}_{3}\hbox{/GaN}$ MISFET

Publication Year: 2012

DOI: https://doi.org/10.1109/led.2012.2222861

Abstract:

Authors:
- Ki-Sik Im
- Ryun‐Hwi Kim
- Ki-Won Kim
- Dong-Seok Kim
- Chun Sung Lee
- S. Cristoloveanu
- Jung-Hee Lee
Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET

Publication Year: 1980

DOI: https://doi.org/10.1143/jjap.19.2143

Abstract:

Authors:
- Masamichi Okamura
- Takeshi Kobayashi
High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator

Publication Year: 1991

DOI: https://doi.org/10.1109/55.82069

Abstract:

Authors:
- C.-L. Chen
- F. W. Smith
- B. J. Clifton
- L.J. Mahoney
- Michael J. Manfra
- A. R. Calawa
Improved Stability of High-Performance ZnO/ZnMgO Hetero-MISFETs

Publication Year: 2007

DOI: https://doi.org/10.1109/led.2007.899448

Abstract:

Authors:
- Shigehiko Sasa
- Takeo Hayafuji
- Motoki Kawasaki
- Kazuto Koike
- Mitsuaki Yano
- Masataka Inoue
Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Publication Year: 2016

DOI: https://doi.org/10.1109/ted.2016.2539341

Abstract:

Authors:
- Tian‐Li Wu
- J. Franco
- Denis Marcon
- Brice De Jaeger
- Benoit Bakeroot
- Steve Stoffels
- M. Van Hove
- G. Groeseneken
- Stefaan Decoutere
Power and Linearity Characteristics of GaN MISFETs on Sapphire Substrate

Publication Year: 2004

DOI: https://doi.org/10.1109/led.2003.822668

Abstract:

Authors:
- Alessandro Chini
- J. Wittich
- S. Heikman
- S. Keller
- Steven P. DenBaars
- Umesh K. Mishra
A microwave InP/SiO2 MISFET

Publication Year: 1978

DOI: https://doi.org/10.1063/1.90098

Abstract:

Authors:
- L. Messick
- D. L. Lile
- A. R. Clawson

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AILBRY - Article Search

Results for 'MISFET' :

Tri-Gate Normally-Off GaN Power MISFET

4H‐SiC MISFETs with nitrogen‐containing insulators

A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_{{\text{T}}}/{f}_{\max}$ of 70/80 GHz

Low interface state density AlN/GaN MISFETs

Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-<i>K</i>MISFET with p+poly-Si Gates -A Theoretical Approach

Over 20-GHz Cutoff Frequency Submicrometer-Gate Diamond MISFETs

High Transconductance MISFET With a Single InAs Nanowire Channel

Diamond MISFET based on boron delta-doped channel

Normally Off Single-Nanoribbon $\hbox{Al}_{2} \hbox{O}_{3}\hbox{/GaN}$ MISFET

Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET

High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator

Improved Stability of High-Performance ZnO/ZnMgO Hetero-MISFETs

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Power and Linearity Characteristics of GaN MISFETs on Sapphire Substrate

A microwave InP/SiO2 MISFET

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