Publication Information

{'id': 'https://openalex.org/W1863005981', 'doi': 'https://doi.org/10.1109/vlsit.1999.799349', 'title': '100 nm channel length MNSFETs using a jet vapor deposited ultra-thin silicon nitride gate dielectric', 'display_name': '100 nm channel length MNSFETs using a jet vapor deposited ultra-thin silicon nitride gate dielectric', 'publication_year': 2003, 'publication_date': '2003-01-20', 'ids': {'openalex': 'https://openalex.org/W1863005981', 'doi': 'https://doi.org/10.1109/vlsit.1999.799349', 'mag': '1863005981'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/vlsit.1999.799349', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'proceedings-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5057107600', 'display_name': 'Souvik Mahapatra', 'orcid': 'https://orcid.org/0000-0002-4516-766X'}, 'institutions': [{'id': 'https://openalex.org/I162827531', 'display_name': 'Indian Institute of Technology Bombay', 'ror': 'https://ror.org/02qyf5152', 'country_code': 'IN', 'type': 'education', 'lineage': ['https://openalex.org/I162827531']}], 'countries': ['IN'], 'is_corresponding': False, 'raw_author_name': 'S. Mahapatra', 'raw_affiliation_strings': ['Department of Electrical Engineering, Indian Institute of Technology, Mumbai, India'], 'affiliations': [{'raw_affiliation_string': 'Department of Electrical Engineering, Indian Institute of Technology, Mumbai, India', 'institution_ids': ['https://openalex.org/I162827531']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5065019619', 'display_name': 'V. Ramgopal Rao', 'orcid': 'https://orcid.org/0000-0001-9157-957X'}, 'institutions': [{'id': 'https://openalex.org/I68891433', 'display_name': 'Indian Institute of Technology Delhi', 'ror': 'https://ror.org/049tgcd06', 'country_code': 'IN', 'type': 'education', 'lineage': ['https://openalex.org/I68891433']}, {'id': 'https://openalex.org/I162827531', 'display_name': 'Indian Institute of Technology Bombay', 'ror': 'https://ror.org/02qyf5152', 'country_code': 'IN', 'type': 'education', 'lineage': ['https://openalex.org/I162827531']}], 'countries': ['IN'], 'is_corresponding': False, 'raw_author_name': 'V. Ramgopal Rao', 'raw_affiliation_strings': ['Department of Electrical Engineering, Indian Institute of Technology, Mumbai, India', 'Indian Institute of Technology Delhi, New Delhi, Delhi, IN'], 'affiliations': [{'raw_affiliation_string': 'Indian Institute of Technology Delhi, New Delhi, Delhi, IN', 'institution_ids': ['https://openalex.org/I68891433']}, {'raw_affiliation_string': 'Department of Electrical Engineering, Indian Institute of Technology, Mumbai, India', 'institution_ids': ['https://openalex.org/I162827531']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5113512471', 'display_name': 'K.N. Manjula Rani', 'orcid': None}, 'institutions': [], 'countries': [], 'is_corresponding': False, 'raw_author_name': 'K.N. Manjula Rani', 'raw_affiliation_strings': [], 'affiliations': []}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5079677470', 'display_name': 'C.D. Parikh', 'orcid': 'https://orcid.org/0000-0003-3269-6316'}, 'institutions': [{'id': 'https://openalex.org/I162827531', 'display_name': 'Indian Institute of Technology Bombay', 'ror': 'https://ror.org/02qyf5152', 'country_code': 'IN', 'type': 'education', 'lineage': ['https://openalex.org/I162827531']}], 'countries': ['IN'], 'is_corresponding': False, 'raw_author_name': 'C.D. Parikh', 'raw_affiliation_strings': ['Department of Electrical Engineering, Indian Institute of Technology, Mumbai, India'], 'affiliations': [{'raw_affiliation_string': 'Department of Electrical Engineering, Indian Institute of Technology, Mumbai, India', 'institution_ids': ['https://openalex.org/I162827531']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5070628907', 'display_name': 'J. Vasi', 'orcid': 'https://orcid.org/0000-0002-6629-086X'}, 'institutions': [{'id': 'https://openalex.org/I162827531', 'display_name': 'Indian Institute of Technology Bombay', 'ror': 'https://ror.org/02qyf5152', 'country_code': 'IN', 'type': 'education', 'lineage': ['https://openalex.org/I162827531']}], 'countries': ['IN'], 'is_corresponding': False, 'raw_author_name': 'J. Vasi', 'raw_affiliation_strings': ['Department of Electrical Engineering, Indian Institute of Technology, Mumbai, India'], 'affiliations': [{'raw_affiliation_string': 'Department of Electrical Engineering, Indian Institute of Technology, Mumbai, India', 'institution_ids': ['https://openalex.org/I162827531']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5102919748', 'display_name': 'Binbin Cheng', 'orcid': 'https://orcid.org/0000-0002-1906-2100'}, 'institutions': [], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'B. Cheng', 'raw_affiliation_strings': ['Advanced Products Research and Development Laboratory, Austin, TX, USA'], 'affiliations': [{'raw_affiliation_string': 'Advanced Products Research and Development Laboratory, Austin, TX, USA', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5015283797', 'display_name': 'M. Khare', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I32971472', 'display_name': 'Yale University', 'ror': 'https://ror.org/03v76x132', 'country_code': 'US', 'type': 'education', 'lineage': ['https://openalex.org/I32971472']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'M. Khare', 'raw_affiliation_strings': ['Department of Electrical Engineering, Yale University, New Heaven, CT, USA'], 'affiliations': [{'raw_affiliation_string': 'Department of Electrical Engineering, Yale University, New Heaven, CT, USA', 'institution_ids': ['https://openalex.org/I32971472']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5084390396', 'display_name': 'J. C. Woo', 'orcid': 'https://orcid.org/0009-0003-4721-8007'}, 'institutions': [{'id': 'https://openalex.org/I161318765', 'display_name': 'University of California, Los Angeles', 'ror': 'https://ror.org/046rm7j60', 'country_code': 'US', 'type': 'education', 'lineage': ['https://openalex.org/I161318765']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'J.C.S. Woo', 'raw_affiliation_strings': ['Department of Electrical Engineering, University of California, Los Angeles, CA, USA'], 'affiliations': [{'raw_affiliation_string': 'Department of Electrical Engineering, University of California, Los Angeles, CA, USA', 'institution_ids': ['https://openalex.org/I161318765']}]}], 'institution_assertions': [], 'countries_distinct_count': 2, 'institutions_distinct_count': 4, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 1.109, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 13, 'citation_normalized_percentile': {'value': 0.481716, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 82, 'max': 83}, 'biblio': {'volume': None, 'issue': None, 'first_page': '79', 'last_page': '80'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10558', 'display_name': 'Advancements in Semiconductor Devices and Circuit Design', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11853', 'display_name': 'Semiconductor materials and interfaces', 'score': 0.9998, 'subfield': {'id': 'https://openalex.org/subfields/3107', 'display_name': 'Atomic and Molecular Physics, and Optics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/transconductance', 'display_name': 'Transconductance', 'score': 0.8017148}, {'id': 'https://openalex.org/keywords/misfet', 'display_name': 'MISFET', 'score': 0.511078}], 'concepts': [{'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.85563433}, {'id': 'https://openalex.org/C2779283907', 'wikidata': 'https://www.wikidata.org/wiki/Q1632964', 'display_name': 'Transconductance', 'level': 4, 'score': 0.8017148}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.73587954}, {'id': 'https://openalex.org/C166972891', 'wikidata': 'https://www.wikidata.org/wiki/Q5527011', 'display_name': 'Gate dielectric', 'level': 4, 'score': 0.732641}, {'id': 'https://openalex.org/C2777431650', 'wikidata': 'https://www.wikidata.org/wiki/Q413828', 'display_name': 'Silicon nitride', 'level': 3, 'score': 0.6594306}, {'id': 'https://openalex.org/C133386390', 'wikidata': 'https://www.wikidata.org/wiki/Q184996', 'display_name': 'Dielectric', 'level': 2, 'score': 0.6159723}, {'id': 'https://openalex.org/C2778673556', 'wikidata': 'https://www.wikidata.org/wiki/Q210793', 'display_name': 'MISFET', 'level': 5, 'score': 0.511078}, {'id': 'https://openalex.org/C194760766', 'wikidata': 'https://www.wikidata.org/wiki/Q410851', 'display_name': 'Nitride', 'level': 3, 'score': 0.49114344}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.48260605}, {'id': 'https://openalex.org/C2778413303', 'wikidata': 'https://www.wikidata.org/wiki/Q210793', 'display_name': 'MOSFET', 'level': 4, 'score': 0.4307115}, {'id': 'https://openalex.org/C544956773', 'wikidata': 'https://www.wikidata.org/wiki/Q670', 'display_name': 'Silicon', 'level': 2, 'score': 0.42499265}, {'id': 'https://openalex.org/C145598152', 'wikidata': 'https://www.wikidata.org/wiki/Q176097', 'display_name': 'Field-effect transistor', 'level': 4, 'score': 0.27565557}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.27312016}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.17513418}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.14121085}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.089705795}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/vlsit.1999.799349', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'score': 0.75, 'display_name': 'Affordable and clean energy', 'id': 'https://metadata.un.org/sdg/7'}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 2, 'referenced_works': ['https://openalex.org/W2015742340', 'https://openalex.org/W2539924627'], 'related_works': ['https://openalex.org/W4388037883', 'https://openalex.org/W2806761697', 'https://openalex.org/W2544451817', 'https://openalex.org/W2169380609', 'https://openalex.org/W2166559311', 'https://openalex.org/W2157112210', 'https://openalex.org/W2115272952', 'https://openalex.org/W2055283308', 'https://openalex.org/W2041690600', 'https://openalex.org/W1986766885'], 'abstract_inverted_index': {'Metal-nitride-semiconductor': [0], '(MNS)': [1], 'FETs': [2], 'with': [3, 10], 'channel': [4], 'lengths': [5], 'down': [6], 'to': [7, 53], '100': [8], 'nm': [9], 'a': [11], 'novel': [12], 'jet': [13], 'vapor': [14], 'deposited': [15], '(JVD)': [16], 'SiN': [17, 37, 59], 'insulator': [18], 'as': [19], 'gate': [20, 63], 'dielectric': [21], 'are': [22, 47], 'fabricated': [23], 'and': [24, 40, 70, 75], 'characterized': [25], 'for': [26], 'their': [27], 'electrical': [28], 'performance.': [29], 'By': [30], 'employing': [31], 'the': [32, 36, 44, 58], 'charge': [33], 'pumping': [34], 'technique,': [35], 'interface': [38, 73], 'quality': [39], 'its': [41], 'effect': [42], 'on': [43], 'transistor': [45], 'performance': [46], 'evaluated.': [48], 'We': [49], 'show': [50, 61], 'that,': [51], 'compared': [52], 'conventional': [54], 'SiO/sub': [55], '2/': [56], 'MOSFETs,': [57], 'devices': [60], 'lower': [62], 'leakage': [64], 'current,': [65], 'competitive': [66], 'drain': [67], 'current': [68], 'drive': [69], 'transconductance,': [71], 'good': [72], 'quality,': [74], 'reduced': [76], 'hot-carrier': [77], 'degradation.': [78]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W1863005981', 'counts_by_year': [], 'updated_date': '2024-12-07T18:10:21.736642', 'created_date': '2016-06-24'}