Publication Information

{'id': 'https://openalex.org/W2088609639', 'doi': 'https://doi.org/10.1587/elex.9.1329', 'title': 'Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering', 'display_name': 'Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering', 'publication_year': 2012, 'publication_date': '2012-01-01', 'ids': {'openalex': 'https://openalex.org/W2088609639', 'doi': 'https://doi.org/10.1587/elex.9.1329', 'mag': '2088609639'}, 'language': 'en', 'primary_location': {'is_oa': True, 'landing_page_url': 'https://doi.org/10.1587/elex.9.1329', 'pdf_url': 'https://www.jstage.jst.go.jp/article/elex/9/16/9_1329/_pdf', 'source': {'id': 'https://openalex.org/S207433681', 'display_name': 'IEICE Electronics Express', 'issn_l': '1349-2543', 'issn': ['1349-2543', '1349-9467'], 'is_oa': True, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4320800604', 'host_organization_name': 'Institute of Electronics, Information and Communication Engineers', 'host_organization_lineage': ['https://openalex.org/P4320800604'], 'host_organization_lineage_names': ['Institute of Electronics, Information and Communication Engineers'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': True, 'oa_status': 'bronze', 'oa_url': 'https://www.jstage.jst.go.jp/article/elex/9/16/9_1329/_pdf', 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5013366818', 'display_name': 'Huiseong Han', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I114531698', 'display_name': 'Tokyo Institute of Technology', 'ror': 'https://ror.org/0112mx960', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I114531698']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Huiseong Han', 'raw_affiliation_strings': ['Department of Electronics and Applied Physics, Tokyo Institute of Technology'], 'affiliations': [{'raw_affiliation_string': 'Department of Electronics and Applied Physics, Tokyo Institute of Technology', 'institution_ids': ['https://openalex.org/I114531698']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5090919175', 'display_name': 'Shun-ichiro Ohmi', 'orcid': 'https://orcid.org/0000-0002-3963-572X'}, 'institutions': [{'id': 'https://openalex.org/I114531698', 'display_name': 'Tokyo Institute of Technology', 'ror': 'https://ror.org/0112mx960', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I114531698']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Shun-ichiro Ohmi', 'raw_affiliation_strings': ['Department of Electronics and Applied Physics, Tokyo Institute of Technology'], 'affiliations': [{'raw_affiliation_string': 'Department of Electronics and Applied Physics, Tokyo Institute of Technology', 'institution_ids': ['https://openalex.org/I114531698']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 1.369, 'has_fulltext': True, 'fulltext_origin': 'pdf', 'cited_by_count': 15, 'citation_normalized_percentile': {'value': 0.77665, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 88, 'max': 89}, 'biblio': {'volume': '9', 'issue': '16', 'first_page': '1329', 'last_page': '1334'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T14117', 'display_name': 'Integrated Circuits and Semiconductor Failure Analysis', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10558', 'display_name': 'Advancements in Semiconductor Devices and Circuit Design', 'score': 0.9998, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/electron-cyclotron-resonance', 'display_name': 'Electron cyclotron resonance', 'score': 0.8458293}, {'id': 'https://openalex.org/keywords/misfet', 'display_name': 'MISFET', 'score': 0.4992566}, {'id': 'https://openalex.org/keywords/cyclotron-resonance', 'display_name': 'Cyclotron resonance', 'score': 0.48301587}, {'id': 'https://openalex.org/keywords/high-κ-dielectric', 'display_name': 'High-κ dielectric', 'score': 0.45663646}, {'id': 'https://openalex.org/keywords/hafnium', 'display_name': 'Hafnium', 'score': 0.42723873}], 'concepts': [{'id': 'https://openalex.org/C175361016', 'wikidata': 'https://www.wikidata.org/wiki/Q245591', 'display_name': 'Electron cyclotron resonance', 'level': 3, 'score': 0.8458293}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.73133504}, {'id': 'https://openalex.org/C133386390', 'wikidata': 'https://www.wikidata.org/wiki/Q184996', 'display_name': 'Dielectric', 'level': 2, 'score': 0.6050076}, {'id': 'https://openalex.org/C22423302', 'wikidata': 'https://www.wikidata.org/wiki/Q898444', 'display_name': 'Sputtering', 'level': 3, 'score': 0.5868071}, {'id': 'https://openalex.org/C194760766', 'wikidata': 'https://www.wikidata.org/wiki/Q410851', 'display_name': 'Nitride', 'level': 3, 'score': 0.5599629}, {'id': 'https://openalex.org/C113196181', 'wikidata': 'https://www.wikidata.org/wiki/Q485223', 'display_name': 'Analytical Chemistry (journal)', 'level': 2, 'score': 0.5223771}, {'id': 'https://openalex.org/C537208039', 'wikidata': 'https://www.wikidata.org/wiki/Q627', 'display_name': 'Nitrogen', 'level': 2, 'score': 0.50549674}, {'id': 'https://openalex.org/C2778673556', 'wikidata': 'https://www.wikidata.org/wiki/Q210793', 'display_name': 'MISFET', 'level': 5, 'score': 0.4992566}, {'id': 'https://openalex.org/C132427895', 'wikidata': 'https://www.wikidata.org/wiki/Q3090439', 'display_name': 'Cyclotron resonance', 'level': 4, 'score': 0.48301587}, {'id': 'https://openalex.org/C82706917', 'wikidata': 'https://www.wikidata.org/wiki/Q10251', 'display_name': 'Plasma', 'level': 2, 'score': 0.46838596}, {'id': 'https://openalex.org/C166972891', 'wikidata': 'https://www.wikidata.org/wiki/Q5527011', 'display_name': 'Gate dielectric', 'level': 4, 'score': 0.46333352}, {'id': 'https://openalex.org/C16317505', 'wikidata': 'https://www.wikidata.org/wiki/Q132013', 'display_name': 'High-κ dielectric', 'level': 3, 'score': 0.45663646}, {'id': 'https://openalex.org/C2777855556', 'wikidata': 'https://www.wikidata.org/wiki/Q4339544', 'display_name': 'Annealing (glass)', 'level': 2, 'score': 0.44267392}, {'id': 'https://openalex.org/C512968161', 'wikidata': 'https://www.wikidata.org/wiki/Q556', 'display_name': 'Hydrogen', 'level': 2, 'score': 0.44115546}, {'id': 'https://openalex.org/C546638069', 'wikidata': 'https://www.wikidata.org/wiki/Q1119', 'display_name': 'Hafnium', 'level': 3, 'score': 0.42723873}, {'id': 'https://openalex.org/C61427134', 'wikidata': 'https://www.wikidata.org/wiki/Q847609', 'display_name': 'Sputter deposition', 'level': 4, 'score': 0.42383993}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.33458477}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.2339724}, {'id': 'https://openalex.org/C19067145', 'wikidata': 'https://www.wikidata.org/wiki/Q1137203', 'display_name': 'Thin film', 'level': 2, 'score': 0.22870868}, {'id': 'https://openalex.org/C39527238', 'wikidata': 'https://www.wikidata.org/wiki/Q204469', 'display_name': 'Cyclotron', 'level': 3, 'score': 0.21271423}, {'id': 'https://openalex.org/C534791751', 'wikidata': 'https://www.wikidata.org/wiki/Q1038', 'display_name': 'Zirconium', 'level': 2, 'score': 0.16580248}, {'id': 'https://openalex.org/C185592680', 'wikidata': 'https://www.wikidata.org/wiki/Q2329', 'display_name': 'Chemistry', 'level': 0, 'score': 0.16480544}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.13876706}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.10170168}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.08678624}, {'id': 'https://openalex.org/C145598152', 'wikidata': 'https://www.wikidata.org/wiki/Q176097', 'display_name': 'Field-effect transistor', 'level': 4, 'score': 0.07760054}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.06936103}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C43617362', 'wikidata': 'https://www.wikidata.org/wiki/Q170050', 'display_name': 'Chromatography', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C178790620', 'wikidata': 'https://www.wikidata.org/wiki/Q11351', 'display_name': 'Organic chemistry', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': True, 'landing_page_url': 'https://doi.org/10.1587/elex.9.1329', 'pdf_url': 'https://www.jstage.jst.go.jp/article/elex/9/16/9_1329/_pdf', 'source': {'id': 'https://openalex.org/S207433681', 'display_name': 'IEICE Electronics Express', 'issn_l': '1349-2543', 'issn': ['1349-2543', '1349-9467'], 'is_oa': True, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4320800604', 'host_organization_name': 'Institute of Electronics, Information and Communication Engineers', 'host_organization_lineage': ['https://openalex.org/P4320800604'], 'host_organization_lineage_names': ['Institute of Electronics, Information and Communication Engineers'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}], 'best_oa_location': {'is_oa': True, 'landing_page_url': 'https://doi.org/10.1587/elex.9.1329', 'pdf_url': 'https://www.jstage.jst.go.jp/article/elex/9/16/9_1329/_pdf', 'source': {'id': 'https://openalex.org/S207433681', 'display_name': 'IEICE Electronics Express', 'issn_l': '1349-2543', 'issn': ['1349-2543', '1349-9467'], 'is_oa': True, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4320800604', 'host_organization_name': 'Institute of Electronics, Information and Communication Engineers', 'host_organization_lineage': ['https://openalex.org/P4320800604'], 'host_organization_lineage_names': ['Institute of Electronics, Information and Communication Engineers'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}, 'sustainable_development_goals': [{'display_name': 'Clean water and sanitation', 'score': 0.42, 'id': 'https://metadata.un.org/sdg/6'}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 18, 'referenced_works': ['https://openalex.org/W1480979850', 'https://openalex.org/W1512740549', 'https://openalex.org/W1593851795', 'https://openalex.org/W1987672245', 'https://openalex.org/W2002765787', 'https://openalex.org/W2009094321', 'https://openalex.org/W2015742340', 'https://openalex.org/W2021527533', 'https://openalex.org/W2030842426', 'https://openalex.org/W2048455807', 'https://openalex.org/W2051072032', 'https://openalex.org/W2053784345', 'https://openalex.org/W2071196668', 'https://openalex.org/W2121415853', 'https://openalex.org/W2121437544', 'https://openalex.org/W2126918915', 'https://openalex.org/W2171508286', 'https://openalex.org/W2952272388'], 'related_works': ['https://openalex.org/W4237906592', 'https://openalex.org/W2368920712', 'https://openalex.org/W2154316697', 'https://openalex.org/W2084661016', 'https://openalex.org/W2080120770', 'https://openalex.org/W2049794270', 'https://openalex.org/W2047031087', 'https://openalex.org/W2037678132', 'https://openalex.org/W1984427205', 'https://openalex.org/W1973047934'], 'abstract_inverted_index': {'We': [0], 'investigated': [1], 'nitrogen-rich': [2], 'HfN': [3, 34, 93], 'insulator': [4], 'on': [5], 'p-Si(100)': [6], 'substrate': [7], 'to': [8, 10, 57, 87], 'prevent': [9], 'form': [11], 'an': [12], 'interface': [13], 'layer': [14], 'with': [15, 65], 'low': [16, 66], 'dielectric': [17], 'constant': [18], 'by': [19, 53], 'electron-cyclotron-resonance': [20], 'plasma': [21], 'sputtering': [22], 'method': [23], 'for': [24], 'the': [25, 32, 44, 81, 89], 'first': [26], 'time.': [27], 'The': [28, 61, 77], 'nitrogen': [29, 58], 'concentration': [30], 'in': [31], 'deposited': [33], 'film': [35], 'was': [36, 75], 'confirmed': [37], 'as': [38], 'approximately': [39], 'Hf:N': [40], '=': [41], '1:1.2.': [42], 'Furthermore,': [43], 'electrical': [45, 90], 'properties': [46, 91], 'of': [47, 63, 69, 83, 92], 'Al/HfN/p-Si(100)': [48], 'gate': [49, 94], 'stack': [50], 'were': [51], 'improved': [52], 'hydrogen': [54, 84], 'anneal': [55, 85], 'compared': [56], '(N2)': [59], 'anneal.': [60], 'EOT': [62], '0.64nm': [64], 'leakage': [67], 'current': [68], '6.2×10-4': [70], 'A/cm2': [71], '(@': [72], 'VFB': [73], '-1V)': [74], 'obtained.': [76], 'results': [78], 'suggest': [79], 'that': [80], 'effect': [82], 'attributed': [86], 'improve': [88], 'dielectric.': [95]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2088609639', 'counts_by_year': [{'year': 2024, 'cited_by_count': 1}, {'year': 2021, 'cited_by_count': 2}, {'year': 2020, 'cited_by_count': 3}, {'year': 2016, 'cited_by_count': 1}, {'year': 2015, 'cited_by_count': 1}, {'year': 2014, 'cited_by_count': 4}, {'year': 2013, 'cited_by_count': 3}], 'updated_date': '2024-12-11T19:39:21.723370', 'created_date': '2016-06-24'}