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{'id': 'https://openalex.org/W4317941477', 'doi': 'https://doi.org/10.1007/s11664-023-10222-2', 'title': 'Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO2 as Gate Dielectric', 'display_name': 'Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO2 as Gate Dielectric', 'publication_year': 2023, 'publication_date': '2023-01-25', 'ids': {'openalex': 'https://openalex.org/W4317941477', 'doi': 'https://doi.org/10.1007/s11664-023-10222-2'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1007/s11664-023-10222-2', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S127985767', 'display_name': 'Journal of Electronic Materials', 'issn_l': '0361-5235', 'issn': ['0361-5235', '1543-186X'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310319900', 'host_organization_name': 'Springer Science+Business Media', 'host_organization_lineage': ['https://openalex.org/P4310319965', 'https://openalex.org/P4310319900'], 'host_organization_lineage_names': ['Springer Nature', 'Springer Science+Business Media'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5001364519', 'display_name': 'Subhajit Mohanty', 'orcid': 'https://orcid.org/0000-0002-1469-5363'}, 'institutions': [{'id': 'https://openalex.org/I27837315', 'display_name': 'University of Michigan–Ann Arbor', 'ror': 'https://ror.org/00jmfr291', 'country_code': 'US', 'type': 'education', 'lineage': ['https://openalex.org/I27837315']}], 'countries': ['US'], 'is_corresponding': True, 'raw_author_name': 'Subhajit Mohanty', 'raw_affiliation_strings': ['Department of Electrical and Computer Engineering, University of Michigan, Ann Arbor, MI, 48109, USA'], 'affiliations': [{'raw_affiliation_string': 'Department of Electrical and Computer Engineering, University of Michigan, Ann Arbor, MI, 48109, USA', 'institution_ids': ['https://openalex.org/I27837315']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5081008048', 'display_name': 'Zhe Jian', 'orcid': 'https://orcid.org/0000-0003-2182-4159'}, 'institutions': [{'id': 'https://openalex.org/I27837315', 'display_name': 'University of Michigan–Ann Arbor', 'ror': 'https://ror.org/00jmfr291', 'country_code': 'US', 'type': 'education', 'lineage': ['https://openalex.org/I27837315']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'Zhe Jian', 'raw_affiliation_strings': ['Department of Electrical and Computer Engineering, University of Michigan, Ann Arbor, MI, 48109, USA'], 'affiliations': [{'raw_affiliation_string': 'Department of Electrical and Computer Engineering, University of Michigan, Ann Arbor, MI, 48109, USA', 'institution_ids': ['https://openalex.org/I27837315']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5060103259', 'display_name': 'Kamruzzaman Khan', 'orcid': 'https://orcid.org/0000-0001-7631-7977'}, 'institutions': [{'id': 'https://openalex.org/I27837315', 'display_name': 'University of Michigan–Ann Arbor', 'ror': 'https://ror.org/00jmfr291', 'country_code': 'US', 'type': 'education', 'lineage': ['https://openalex.org/I27837315']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'Kamruzzaman Khan', 'raw_affiliation_strings': ['Department of Material Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA'], 'affiliations': [{'raw_affiliation_string': 'Department of Material Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA', 'institution_ids': ['https://openalex.org/I27837315']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5085630701', 'display_name': 'Elaheh Ahmadi', 'orcid': 'https://orcid.org/0000-0002-8330-9366'}, 'institutions': [{'id': 'https://openalex.org/I27837315', 'display_name': 'University of Michigan–Ann Arbor', 'ror': 'https://ror.org/00jmfr291', 'country_code': 'US', 'type': 'education', 'lineage': ['https://openalex.org/I27837315']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'Elaheh Ahmadi', 'raw_affiliation_strings': ['Applied Physics Program, University of Michigan, Ann Arbor, MI, 48109, USA'], 'affiliations': [{'raw_affiliation_string': 'Applied Physics Program, University of Michigan, Ann Arbor, MI, 48109, USA', 'institution_ids': ['https://openalex.org/I27837315']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': ['https://openalex.org/A5001364519'], 'corresponding_institution_ids': ['https://openalex.org/I27837315'], 'apc_list': {'value': 2490, 'currency': 'EUR', 'value_usd': 3090, 'provenance': 'doaj'}, 'apc_paid': None, 'fwci': 1.175, 'has_fulltext': False, 'cited_by_count': 4, 'citation_normalized_percentile': {'value': 0.999707, 'is_in_top_1_percent': True, 'is_in_top_10_percent': True}, 'cited_by_percentile_year': {'min': 88, 'max': 90}, 'biblio': {'volume': '52', 'issue': '4', 'first_page': '2596', 'last_page': '2602'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10099', 'display_name': 'GaN-based semiconductor devices and materials', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10099', 'display_name': 'GaN-based semiconductor devices and materials', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T12529', 'display_name': 'Ga2O3 and related materials', 'score': 0.9997, 'subfield': {'id': 'https://openalex.org/subfields/2504', 'display_name': 'Electronic, Optical and Magnetic Materials'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 0.9996, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/leakage', 'display_name': 'Leakage (economics)', 'score': 0.53679645}, {'id': 'https://openalex.org/keywords/misfet', 'display_name': 'MISFET', 'score': 0.5326946}, {'id': 'https://openalex.org/keywords/high-κ-dielectric', 'display_name': 'High-κ dielectric', 'score': 0.49591312}, {'id': 'https://openalex.org/keywords/metal-gate', 'display_name': 'Metal gate', 'score': 0.45933002}], 'concepts': [{'id': 'https://openalex.org/C162057924', 'wikidata': 'https://www.wikidata.org/wiki/Q1617706', 'display_name': 'High-electron-mobility transistor', 'level': 4, 'score': 0.720044}, {'id': 'https://openalex.org/C166972891', 'wikidata': 'https://www.wikidata.org/wiki/Q5527011', 'display_name': 'Gate dielectric', 'level': 4, 'score': 0.69913244}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.6743896}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.63446724}, {'id': 'https://openalex.org/C133386390', 'wikidata': 'https://www.wikidata.org/wiki/Q184996', 'display_name': 'Dielectric', 'level': 2, 'score': 0.58630425}, {'id': 'https://openalex.org/C2777042071', 'wikidata': 'https://www.wikidata.org/wiki/Q6509304', 'display_name': 'Leakage (economics)', 'level': 2, 'score': 0.53679645}, {'id': 'https://openalex.org/C2778673556', 'wikidata': 'https://www.wikidata.org/wiki/Q210793', 'display_name': 'MISFET', 'level': 5, 'score': 0.5326946}, {'id': 'https://openalex.org/C69544855', 'wikidata': 'https://www.wikidata.org/wiki/Q757625', 'display_name': 'Atomic layer deposition', 'level': 3, 'score': 0.5089588}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.50125647}, {'id': 'https://openalex.org/C16317505', 'wikidata': 'https://www.wikidata.org/wiki/Q132013', 'display_name': 'High-κ dielectric', 'level': 3, 'score': 0.49591312}, {'id': 'https://openalex.org/C51140833', 'wikidata': 'https://www.wikidata.org/wiki/Q6822740', 'display_name': 'Metal gate', 'level': 5, 'score': 0.45933002}, {'id': 'https://openalex.org/C113196181', 'wikidata': 'https://www.wikidata.org/wiki/Q485223', 'display_name': 'Analytical Chemistry (journal)', 'level': 2, 'score': 0.42817292}, {'id': 'https://openalex.org/C119321828', 'wikidata': 'https://www.wikidata.org/wiki/Q1267190', 'display_name': 'Breakdown voltage', 'level': 3, 'score': 0.41963217}, {'id': 'https://openalex.org/C2361726', 'wikidata': 'https://www.wikidata.org/wiki/Q5527031', 'display_name': 'Gate oxide', 'level': 4, 'score': 0.3545398}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.30916774}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.26888913}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.25246847}, {'id': 'https://openalex.org/C145598152', 'wikidata': 'https://www.wikidata.org/wiki/Q176097', 'display_name': 'Field-effect transistor', 'level': 4, 'score': 0.226787}, {'id': 'https://openalex.org/C185592680', 'wikidata': 'https://www.wikidata.org/wiki/Q2329', 'display_name': 'Chemistry', 'level': 0, 'score': 0.20645732}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.13502899}, {'id': 'https://openalex.org/C43617362', 'wikidata': 'https://www.wikidata.org/wiki/Q170050', 'display_name': 'Chromatography', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C162324750', 'wikidata': 'https://www.wikidata.org/wiki/Q8134', 'display_name': 'Economics', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C139719470', 'wikidata': 'https://www.wikidata.org/wiki/Q39680', 'display_name': 'Macroeconomics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1007/s11664-023-10222-2', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S127985767', 'display_name': 'Journal of Electronic Materials', 'issn_l': '0361-5235', 'issn': ['0361-5235', '1543-186X'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310319900', 'host_organization_name': 'Springer Science+Business Media', 'host_organization_lineage': ['https://openalex.org/P4310319965', 'https://openalex.org/P4310319900'], 'host_organization_lineage_names': ['Springer Nature', 'Springer Science+Business Media'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'display_name': 'Affordable and clean energy', 'score': 0.64, 'id': 'https://metadata.un.org/sdg/7'}], 'grants': [{'funder': 'https://openalex.org/F4320338298', 'funder_display_name': 'Office of Naval Research Global', 'award_id': 'N00014-20-1-2658'}], 'datasets': [], 'versions': [], 'referenced_works_count': 22, 'referenced_works': ['https://openalex.org/W1965817159', 'https://openalex.org/W1973821320', 'https://openalex.org/W1984645273', 'https://openalex.org/W1994616932', 'https://openalex.org/W2004720874', 'https://openalex.org/W2013665502', 'https://openalex.org/W2029486580', 'https://openalex.org/W2061014269', 'https://openalex.org/W2068325178', 'https://openalex.org/W2118616252', 'https://openalex.org/W2135923206', 'https://openalex.org/W2137778525', 'https://openalex.org/W2151628329', 'https://openalex.org/W2157752601', 'https://openalex.org/W2304074492', 'https://openalex.org/W2344256092', 'https://openalex.org/W2519902658', 'https://openalex.org/W2769091763', 'https://openalex.org/W2999943030', 'https://openalex.org/W3138320092', 'https://openalex.org/W3183254726', 'https://openalex.org/W4200053310'], 'related_works': ['https://openalex.org/W645755441', 'https://openalex.org/W2903976092', 'https://openalex.org/W2543315228', 'https://openalex.org/W2477009900', 'https://openalex.org/W2405346145', 'https://openalex.org/W2115152876', 'https://openalex.org/W2092696736', 'https://openalex.org/W2014337071', 'https://openalex.org/W1993005033', 'https://openalex.org/W1974501819'], 'abstract_inverted_index': None, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W4317941477', 'counts_by_year': [{'year': 2024, 'cited_by_count': 2}, {'year': 2023, 'cited_by_count': 2}], 'updated_date': '2024-12-18T18:39:33.124006', 'created_date': '2023-01-25'}