Title: Analysis of on-off state for work function and bottom gate voltage of Sub-10 nm Double Gate MOSFET
Abstract: We investigate the change of the subthreshold swing with respect to the work function of the gate metal and the bottom gate voltage in a double gate (DG) MOSFET with a channel length of 10 nm or less in this paper. A subthreshold swing in general subthreshold characteristics can be defined when the logarithmic value of the drain current is linear with respect to the gate voltage. However, since the tunneling current cannot be ignored below the threshold voltage of the DGMOSFET of 10-nm or less, the drain current-gate voltage becomes nonlinear. The drain current of 10 -7 A is defined as the on-current, and the drain current of 10 -12 A is defined as the off current and the deviation of the corresponding gate voltages, ΔV on-off , is investigated. In the case of the asymmetric DGMOSFET, ΔV on-off decreases with decreasing the work function and the bottom gate voltage under a constant threshold voltage. In particular, ΔV on-off was significantly decreased with decreasing oxide film thickness and channel length.
Publication Year: 2017
Publication Date: 2017-06-01
Language: en
Type: article
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