Title: Analysis of Threshold Voltage Decreasing for Single-Gate and Double-Gate SOI MOSFET
Abstract: Based on the charge-sharing model, analyses the influence of short-channel effect on threshold voltage for single-gate and double-gate SOI MOSFET's devices.Therotical calculation has been made by MatLab for both devices, indicating short channel effect will decrease threshold voltage. The channel doping, silicon film thickness and gate-oxide thickness are also considered in the model analysis. The results show that thin film device can efficiently suppress the short-channel effect. The double-gate device contribute only as 1/4 times of short channel effects as of the single-gate device. In addition, alteering device structure can more effectively control the short-channel effect, compared with only modifying device parameters.
Publication Year: 2009
Publication Date: 2009-01-01
Language: en
Type: article
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