Title: Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope
Abstract: A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.
Publication Year: 2016
Publication Date: 2016-04-26
Language: en
Type: article
Indexed In: ['crossref', 'pubmed']
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Cited By Count: 2
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