Title: Stress-induced current in thin silicon dioxide films
Abstract:Low-field current following Fowler-Nordheim stress of thin gate oxides is studied. The conduction mechanism is attributed to trap-assisted tunneling of electrons. For oxides thicker than 100 AA, this ...Low-field current following Fowler-Nordheim stress of thin gate oxides is studied. The conduction mechanism is attributed to trap-assisted tunneling of electrons. For oxides thicker than 100 AA, this stress-induced current is observed to decay as traps are filled without significant tunneling out of traps. In thinner oxides, steady-state current flows when there is an equilibrium between trap filling and emptying processes. This model is observed to be consistent with stress-induced current behavior in a wide range of oxide thicknesses (60 AA to 130 AA) and process technologies.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>Read More
Publication Year: 1992
Publication Date: 1992-01-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 189
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