Publication Information

{'id': 'https://openalex.org/W1991674770', 'doi': 'https://doi.org/10.1088/0256-307x/25/4/071', 'title': 'SILC during NBTI Stress in PMOSFETs with Ultra-Thin SiON Gate Dielectrics', 'display_name': 'SILC during NBTI Stress in PMOSFETs with Ultra-Thin SiON Gate Dielectrics', 'publication_year': 2008, 'publication_date': '2008-04-01', 'ids': {'openalex': 'https://openalex.org/W1991674770', 'doi': 'https://doi.org/10.1088/0256-307x/25/4/071', 'mag': '1991674770'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1088/0256-307x/25/4/071', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S110033974', 'display_name': 'Chinese Physics Letters', 'issn_l': '0256-307X', 'issn': ['0256-307X', '1741-3540'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310311669', 'host_organization_name': 'Institute of Physics', 'host_organization_lineage': ['https://openalex.org/P4310311669'], 'host_organization_lineage_names': ['Institute of Physics'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5111124475', 'display_name': 'Cao Yan-Rong', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I149594827', 'display_name': 'Xidian University', 'ror': 'https://ror.org/05s92vm98', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I149594827']}], 'countries': ['CN'], 'is_corresponding': False, 'raw_author_name': 'Cao Yan-Rong', 'raw_affiliation_strings': ["Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", "School of Microelectronics, Xidian University, Xi'an 710071 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071"], 'affiliations': [{'raw_affiliation_string': "School of Microelectronics, Xidian University, Xi'an 710071 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", 'institution_ids': ['https://openalex.org/I149594827']}, {'raw_affiliation_string': "Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", 'institution_ids': ['https://openalex.org/I149594827']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5100750974', 'display_name': 'Yue Hao', 'orcid': 'https://orcid.org/0000-0002-8081-2919'}, 'institutions': [{'id': 'https://openalex.org/I149594827', 'display_name': 'Xidian University', 'ror': 'https://ror.org/05s92vm98', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I149594827']}], 'countries': ['CN'], 'is_corresponding': True, 'raw_author_name': 'Hao Yue', 'raw_affiliation_strings': ["Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", "School of Microelectronics, Xidian University, Xi'an 710071 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071"], 'affiliations': [{'raw_affiliation_string': "Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", 'institution_ids': ['https://openalex.org/I149594827']}, {'raw_affiliation_string': "School of Microelectronics, Xidian University, Xi'an 710071 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", 'institution_ids': ['https://openalex.org/I149594827']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5100321031', 'display_name': 'Ma Xiao-Hua', 'orcid': 'https://orcid.org/0000-0002-4325-3361'}, 'institutions': [{'id': 'https://openalex.org/I149594827', 'display_name': 'Xidian University', 'ror': 'https://ror.org/05s92vm98', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I149594827']}], 'countries': ['CN'], 'is_corresponding': False, 'raw_author_name': 'Ma Xiao-Hua', 'raw_affiliation_strings': ["Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", "School of Microelectronics, Xidian University, Xi'an 710071 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071"], 'affiliations': [{'raw_affiliation_string': "School of Microelectronics, Xidian University, Xi'an 710071 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", 'institution_ids': ['https://openalex.org/I149594827']}, {'raw_affiliation_string': "Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", 'institution_ids': ['https://openalex.org/I149594827']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5101475928', 'display_name': 'Yu Lei', 'orcid': 'https://orcid.org/0000-0003-2477-3377'}, 'institutions': [{'id': 'https://openalex.org/I149594827', 'display_name': 'Xidian University', 'ror': 'https://ror.org/05s92vm98', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I149594827']}], 'countries': ['CN'], 'is_corresponding': False, 'raw_author_name': 'Yu Lei', 'raw_affiliation_strings': ["Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", "School of Microelectronics, Xidian University, Xi'an 710071 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071"], 'affiliations': [{'raw_affiliation_string': "School of Microelectronics, Xidian University, Xi'an 710071 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", 'institution_ids': ['https://openalex.org/I149594827']}, {'raw_affiliation_string': "Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", 'institution_ids': ['https://openalex.org/I149594827']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5100862281', 'display_name': 'Bambi Hu', 'orcid': 'https://orcid.org/0000-0001-7209-629X'}, 'institutions': [{'id': 'https://openalex.org/I149594827', 'display_name': 'Xidian University', 'ror': 'https://ror.org/05s92vm98', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I149594827']}], 'countries': ['CN'], 'is_corresponding': False, 'raw_author_name': 'Hu Shi-Gang', 'raw_affiliation_strings': ["Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", "School of Microelectronics, Xidian University, Xi'an 710071 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071"], 'affiliations': [{'raw_affiliation_string': "School of Microelectronics, Xidian University, Xi'an 710071 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", 'institution_ids': ['https://openalex.org/I149594827']}, {'raw_affiliation_string': "Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071", 'institution_ids': ['https://openalex.org/I149594827']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': ['https://openalex.org/A5100750974'], 'corresponding_institution_ids': ['https://openalex.org/I149594827'], 'apc_list': None, 'apc_paid': None, 'fwci': 0.518, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 3, 'citation_normalized_percentile': {'value': 0.62404, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 74, 'max': 76}, 'biblio': {'volume': '25', 'issue': '4', 'first_page': '1427', 'last_page': '1430'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10558', 'display_name': 'Advancements in Semiconductor Devices and Circuit Design', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T12808', 'display_name': 'Ferroelectric and Negative Capacitance Devices', 'score': 0.9994, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/silc', 'display_name': 'SILC', 'score': 0.9938903}, {'id': 'https://openalex.org/keywords/negative-bias-temperature-instability', 'display_name': 'Negative-bias temperature instability', 'score': 0.5442737}], 'concepts': [{'id': 'https://openalex.org/C86642149', 'wikidata': 'https://www.wikidata.org/wiki/Q7390375', 'display_name': 'SILC', 'level': 3, 'score': 0.9938903}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.80082}, {'id': 'https://openalex.org/C120398109', 'wikidata': 'https://www.wikidata.org/wiki/Q175751', 'display_name': 'Quantum tunnelling', 'level': 2, 'score': 0.56728005}, {'id': 'https://openalex.org/C2778413303', 'wikidata': 'https://www.wikidata.org/wiki/Q210793', 'display_name': 'MOSFET', 'level': 4, 'score': 0.5461158}, {'id': 'https://openalex.org/C557185', 'wikidata': 'https://www.wikidata.org/wiki/Q6987194', 'display_name': 'Negative-bias temperature instability', 'level': 5, 'score': 0.5442737}, {'id': 'https://openalex.org/C133386390', 'wikidata': 'https://www.wikidata.org/wiki/Q184996', 'display_name': 'Dielectric', 'level': 2, 'score': 0.5419231}, {'id': 'https://openalex.org/C21036866', 'wikidata': 'https://www.wikidata.org/wiki/Q181767', 'display_name': 'Stress (linguistics)', 'level': 2, 'score': 0.5413944}, {'id': 'https://openalex.org/C99844830', 'wikidata': 'https://www.wikidata.org/wiki/Q102441924', 'display_name': 'Scaling', 'level': 2, 'score': 0.44759682}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.39936823}, {'id': 'https://openalex.org/C26873012', 'wikidata': 'https://www.wikidata.org/wiki/Q214781', 'display_name': 'Condensed matter physics', 'level': 1, 'score': 0.32850483}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.31124285}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.18263999}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.08003849}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.06595823}, {'id': 'https://openalex.org/C41895202', 'wikidata': 'https://www.wikidata.org/wiki/Q8162', 'display_name': 'Linguistics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C138885662', 'wikidata': 'https://www.wikidata.org/wiki/Q5891', 'display_name': 'Philosophy', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C2524010', 'wikidata': 'https://www.wikidata.org/wiki/Q8087', 'display_name': 'Geometry', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C33923547', 'wikidata': 'https://www.wikidata.org/wiki/Q395', 'display_name': 'Mathematics', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1088/0256-307x/25/4/071', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S110033974', 'display_name': 'Chinese Physics Letters', 'issn_l': '0256-307X', 'issn': ['0256-307X', '1741-3540'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310311669', 'host_organization_name': 'Institute of Physics', 'host_organization_lineage': ['https://openalex.org/P4310311669'], 'host_organization_lineage_names': ['Institute of Physics'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 9, 'referenced_works': ['https://openalex.org/W1970786723', 'https://openalex.org/W1982083551', 'https://openalex.org/W2023644106', 'https://openalex.org/W2038996202', 'https://openalex.org/W2064641562', 'https://openalex.org/W2085289999', 'https://openalex.org/W2112542663', 'https://openalex.org/W2132779228', 'https://openalex.org/W2134337228'], 'related_works': ['https://openalex.org/W761865031', 'https://openalex.org/W2843479960', 'https://openalex.org/W2541625110', 'https://openalex.org/W2540606573', 'https://openalex.org/W2167195438', 'https://openalex.org/W2132779228', 'https://openalex.org/W2122324886', 'https://openalex.org/W1988236200', 'https://openalex.org/W1977925078', 'https://openalex.org/W1714092281'], 'abstract_inverted_index': {'Negative': [0], 'bias': [1], 'temperature': [2], 'instability': [3], '(NBTI)': [4], 'and': [5, 64, 82], 'stress-induced': [6], 'leakage': [7], 'current': [8], '(SILC)': [9], 'both': [10], 'are': [11], 'more': [12], 'serious': [13], 'due': [14], 'to': [15, 42, 86], 'the': [16, 24, 50, 53, 56, 65, 88], 'aggressive': [17], 'scaling': [18], 'lowering': [19], 'of': [20, 76, 92], 'devices.': [21], 'We': [22, 72], 'investigate': [23], 'SILC': [25, 36, 58, 93], 'during': [26, 94], 'NBTI': [27, 95], 'stress': [28], 'in': [29], 'PMOSFETs': [30], 'with': [31], 'ultra-thin': [32], 'gate': [33], 'dielectrics.': [34], 'The': [35], 'sensed': [37, 59, 67], 'range': [38], 'from': [39], '-1': [40], 'V': [41, 44], '1': [43], 'is': [45], 'divided': [46], 'into': [47], 'four': [48, 89], 'parts:': [49], 'on-state': [51], 'SILC,': [52, 55], 'near-zero': [54], 'off-state': [57], 'at': [60, 68], 'lower': [61], 'positive': [62, 70], 'voltages': [63], 'one': [66], 'higher': [69], 'voltages.': [71], 'develop': [73], 'a': [74], 'model': [75], 'tunnelling': [77], 'assisted': [78], 'by': [79], 'interface': [80], 'states': [81], 'oxide': [83], 'bulk': [84], 'traps': [85], 'explain': [87], 'different': [90], 'parts': [91], 'stress.': [96]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W1991674770', 'counts_by_year': [{'year': 2018, 'cited_by_count': 1}], 'updated_date': '2024-12-13T16:19:54.389004', 'created_date': '2016-06-24'}