Title: Analysis of the stress-induced leakage current and related trap distribution
Abstract:The amplitudes of stress-induced leakage currents (SILC) generated for a constant injected dose are measured for oxide thicknesses between 3.5 and 9 nm. Then, the doses necessary to generate the same ...The amplitudes of stress-induced leakage currents (SILC) generated for a constant injected dose are measured for oxide thicknesses between 3.5 and 9 nm. Then, the doses necessary to generate the same amplitude of SILC for all oxide thicknesses at 6 MV/cm are measured. The analysis of these results, considering that the SILC is due to a trap-assisted tunneling mechanism, demonstrates that a uniform trap distribution throughout the oxide cannot explain the thickness dependence of the SILC, indicating that the trap distribution is an important feature in the understanding of the oxide thickness dependence of the SILC.Read More
Publication Year: 1999
Publication Date: 1999-12-13
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 16
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