Title: The reliability analysis in gate oxide of MOSFET via percolation models
Abstract: Gate oxide breakdown is a key mechanism limiting IC lifetime. In this paper, the basic percolation theory and fractal dimensions are introduced to describe mechanisms of gate oxide wearout and breakdown in nano-scale. We also examine the characteristics of time dependent dielectric breakdown(TDDB) for ultra-thin gate oxide mainly via percolation model. From the fractal dimension describing complex geometrical structures, we investigate the relationship between the gate oxide structure and the critical defect density in ultrathin gate oxide breakdown.
Publication Year: 2008
Publication Date: 2008-11-01
Language: en
Type: article
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