Title: Modeling for reduced gate capacitance of nanoscale MOSFETs
Abstract: As gate oxides become thinner, in conjunction with scaling of MOS technologies, a discrepancy arises between the gate oxide capacitance and the total gate capacitance, due to the increasing importance of the carrier distributions in the polysilicon electrodes. For the first time, based on least-squares curve fit, we quantitatively explore the impact of quantum mechanics effects in polysilicon gate region on gate capacitance. Comparing the theoretical curves with an extensive set of simulation ones has validated this model.
Publication Year: 2006
Publication Date: 2006-07-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 2
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot