Title: Gate leakage current partitioning in nanoscale double gate MOSFETs, using compact analytical model
Abstract: This paper presents a compact gate leakage current partitioning model for nanoscale Double Gate (DG) MOSFETs, using analytical models of the direct tunneling gate leakage current. Gate leakage current becomes important and an essential aspect of MOSFET modeling as the gate oxide thickness is scaled down to 1 nm and below in advanced CMOS processes. We considered an ideal interface (ideal case without an interfacial layer) and two layers high k dielectric materials as gate insulators. In the case of two layers, a thin layer of SiO2 as an interfacial layer is considered. The results of the gate current partitioning components into drain and source show good agreement with 2D TCAD numerical device simulation (Silvaco Atlas).
Publication Year: 2012
Publication Date: 2012-09-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 5
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot