Title: Mechanism of stress-induced leakage current in MOS capacitors
Abstract:Stress-induced leakage current (SILC) is examined both below and above the voltage at which the preexisting Fowler-Nordheim tunneling current dominates. Based on these results, it is argued that SILC ...Stress-induced leakage current (SILC) is examined both below and above the voltage at which the preexisting Fowler-Nordheim tunneling current dominates. Based on these results, it is argued that SILC is the result of inelastic rather than elastic trap-assisted tunneling. This clarification explains the well-known thickness dependence of the SILC at low fields that has identified it as a scaling limitation for nonvolatile memory tunnel oxide. It also explains a newly observed different thickness dependence at high fields and facilitates modeling of the electric field/voltage and trap density dependencies of the SILC.Read More
Publication Year: 1997
Publication Date: 1997-01-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 199
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