Abstract:Structural changes of a ReRAM (resistive random access memory) during the resistive switching was successfully observed for the first time by in-situ TEM. We succeeded the observation for the three ki...Structural changes of a ReRAM (resistive random access memory) during the resistive switching was successfully observed for the first time by in-situ TEM. We succeeded the observation for the three kinds of ReRAM devices with different ReRAM materials.Read More
Publication Year: 2014
Publication Date: 2014-06-01
Language: en
Type: article
Indexed In: ['crossref']
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