Recent progress of resistive switching random access memory (RRAM)

Name: Work Video:
Duration: 3 min 30 s
Description: This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM. As an example of application beyond digital memory/storage, AlOx-based RRAM was explored for neuromorphic computing.
Yi Wu; Shimeng Yu; Ximeng Guan; H.‐S. Philip Wong
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