Title: Analog memory characteristics of 1T1R MoOx resistive random access memory
Abstract:Multilevel resistive random access memory (ReRAM) is known as a key device for neural networks and reconfigurable computing. Control of the resistance is important to utilize ReRAM as an analog-resist...Multilevel resistive random access memory (ReRAM) is known as a key device for neural networks and reconfigurable computing. Control of the resistance is important to utilize ReRAM as an analog-resistance memory. In this study, we confirm that MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> ReRAM shows analog memory characteristics by the control of compliance current. In addition, we propose a verification method to achieve target resistances.Read More
Publication Year: 2016
Publication Date: 2016-06-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 2
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