Title: Understanding variability in MgO-based ReRAM devices for trust in semiconductor designs
Abstract:This paper discusses the characteristics and fabrication processes involved in novel MgO-Si based forming-free and self-compliant current controlled Resistive Random Access Memory (ReRAM) devices. Exp...This paper discusses the characteristics and fabrication processes involved in novel MgO-Si based forming-free and self-compliant current controlled Resistive Random Access Memory (ReRAM) devices. Experimental data was taken from several devices and used to generate a model to simulate device switching characteristics. The unique characteristics of these devices are utilized to demonstrate an application in hardware security. The application is then validated through a series of simulations of the circuit design.Read More
Publication Year: 2016
Publication Date: 2016-07-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 2
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