Title: High pressure growth of GaN — new prospects for blue lasers
Abstract: Recent significant progress in III–V semiconductor technology based on GaN has created widespread interest in GaN device applications. It is argued that the remaining obstacle to the fabrication of a GaN laser is a lack of thermally and lattice-matched substrates. The thermodynamic properties of III–V nitrides are reviewed and recent progress in the growth of GaN platelets under high pressure nitrogen is presented. It is shown that GaN crystals as grown at present have good structural properties, flat surfaces, small dislocation densities and cleavage planes perpendicular to the (0001) crystallographic plane. These properties suggest that GaN substrates offer new prospects for laser technology.
Publication Year: 1996
Publication Date: 1996-09-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 153
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