Publication Information

{'id': 'https://openalex.org/W2654716541', 'doi': 'https://doi.org/10.23919/ltb-3d.2017.7947427', 'title': 'Advanced packaging for wide band gap power semiconductors', 'display_name': 'Advanced packaging for wide band gap power semiconductors', 'publication_year': 2017, 'publication_date': '2017-05-01', 'ids': {'openalex': 'https://openalex.org/W2654716541', 'doi': 'https://doi.org/10.23919/ltb-3d.2017.7947427', 'mag': '2654716541'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.23919/ltb-3d.2017.7947427', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'proceedings-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5044890041', 'display_name': 'Gudrun Feix', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I4577782', 'display_name': 'Technische Universität Berlin', 'ror': 'https://ror.org/03v4gjf40', 'country_code': 'DE', 'type': 'education', 'lineage': ['https://openalex.org/I4577782']}], 'countries': ['DE'], 'is_corresponding': True, 'raw_author_name': 'Gudrun Feix', 'raw_affiliation_strings': ['Technical University Berlin, Berlin, Germany'], 'affiliations': [{'raw_affiliation_string': 'Technical University Berlin, Berlin, Germany', 'institution_ids': ['https://openalex.org/I4577782']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': ['https://openalex.org/A5044890041'], 'corresponding_institution_ids': ['https://openalex.org/I4577782'], 'apc_list': None, 'apc_paid': None, 'fwci': 0.0, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 0, 'citation_normalized_percentile': {'value': 0.0, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 0, 'max': 63}, 'biblio': {'volume': None, 'issue': None, 'first_page': '31', 'last_page': '31'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T11444', 'display_name': 'Electromagnetic Compatibility and Noise Suppression', 'score': 0.9927, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T11444', 'display_name': 'Electromagnetic Compatibility and Noise Suppression', 'score': 0.9927, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11527', 'display_name': '3D IC and TSV technologies', 'score': 0.9581, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10460', 'display_name': 'Electronic Packaging and Soldering Technologies', 'score': 0.9468, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/wide-bandgap-semiconductor', 'display_name': 'Wide-bandgap semiconductor', 'score': 0.80670965}, {'id': 'https://openalex.org/keywords/power-module', 'display_name': 'Power module', 'score': 0.4629897}], 'concepts': [{'id': 'https://openalex.org/C2780722187', 'wikidata': 'https://www.wikidata.org/wiki/Q412356', 'display_name': 'Silicon carbide', 'level': 2, 'score': 0.81498945}, {'id': 'https://openalex.org/C189278905', 'wikidata': 'https://www.wikidata.org/wiki/Q2157708', 'display_name': 'Wide-bandgap semiconductor', 'level': 2, 'score': 0.80670965}, {'id': 'https://openalex.org/C2778871202', 'wikidata': 'https://www.wikidata.org/wiki/Q411713', 'display_name': 'Gallium nitride', 'level': 3, 'score': 0.7849263}, {'id': 'https://openalex.org/C108225325', 'wikidata': 'https://www.wikidata.org/wiki/Q11456', 'display_name': 'Semiconductor', 'level': 2, 'score': 0.71463466}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.64231503}, {'id': 'https://openalex.org/C129014197', 'wikidata': 'https://www.wikidata.org/wiki/Q906544', 'display_name': 'Power semiconductor device', 'level': 3, 'score': 0.555941}, {'id': 'https://openalex.org/C163258240', 'wikidata': 'https://www.wikidata.org/wiki/Q25342', 'display_name': 'Power (physics)', 'level': 2, 'score': 0.5441656}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.54245573}, {'id': 'https://openalex.org/C141812795', 'wikidata': 'https://www.wikidata.org/wiki/Q7236534', 'display_name': 'Power module', 'level': 3, 'score': 0.4629897}, {'id': 'https://openalex.org/C79635011', 'wikidata': 'https://www.wikidata.org/wiki/Q175805', 'display_name': 'Semiconductor device', 'level': 3, 'score': 0.45761743}, {'id': 'https://openalex.org/C181966813', 'wikidata': 'https://www.wikidata.org/wiki/Q806352', 'display_name': 'Band gap', 'level': 2, 'score': 0.43592802}, {'id': 'https://openalex.org/C61696701', 'wikidata': 'https://www.wikidata.org/wiki/Q770766', 'display_name': 'Engineering physics', 'level': 1, 'score': 0.42483303}, {'id': 'https://openalex.org/C544956773', 'wikidata': 'https://www.wikidata.org/wiki/Q670', 'display_name': 'Silicon', 'level': 2, 'score': 0.41880578}, {'id': 'https://openalex.org/C24326235', 'wikidata': 'https://www.wikidata.org/wiki/Q126095', 'display_name': 'Electronic engineering', 'level': 1, 'score': 0.38327357}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.34242678}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.19013548}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.15007102}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.09043041}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.07415256}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.23919/ltb-3d.2017.7947427', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 3, 'referenced_works': ['https://openalex.org/W2114330130', 'https://openalex.org/W2270894514', 'https://openalex.org/W2740260637'], 'related_works': ['https://openalex.org/W4313015110', 'https://openalex.org/W3207919737', 'https://openalex.org/W2911053491', 'https://openalex.org/W2568603120', 'https://openalex.org/W2550502560', 'https://openalex.org/W2345599747', 'https://openalex.org/W2129871830', 'https://openalex.org/W2125881044', 'https://openalex.org/W2003184216', 'https://openalex.org/W1508568262'], 'abstract_inverted_index': {'This': [0], 'paper': [1], 'explains': [2], 'the': [3, 6], 'constraints': [4], 'for': [5], 'use': [7, 38], 'of': [8, 39], 'very': [9], 'fast': [10], 'switching,': [11], 'wide': [12], 'band': [13], 'gap': [14], 'power': [15, 30], 'semiconductors': [16], 'like': [17], 'silicon': [18], 'carbide': [19], '(SiC)': [20], 'and': [21], 'gallium': [22], 'nitride': [23], '(GaN)': [24], 'given': [25, 48], 'in': [26], 'standard': [27], 'wire': [28], 'bonded': [29], 'modules.': [31], 'Furthermore,': [32], 'a': [33], 'way': [34], 'to': [35], 'make': [36], 'full': [37], 'them': [40], 'by': [41], 'using': [42], 'an': [43], 'advanced': [44], 'packaging': [45], 'method': [46], 'is': [47], 'here.': [49]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2654716541', 'counts_by_year': [], 'updated_date': '2024-12-08T11:13:11.424173', 'created_date': '2017-06-30'}