Gallium nitride (GaN) HEMT's: progress and potential for commercial applications

Name: Work Video:
Duration: 3 min 30 s
Description: This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.
J. R. Shealy; J. Smart; Matthew Poulton; R.A. Sadler; D.E. Grider; Shawn R. Gibb; Brook Hosse; Bruna Ramos de Sousa; D. Halchin; V. Steel; P. Garber; Patrick Wilkerson; B. Zaroff; J. R. Dick; T. Mercier; J. Bonaker; M. Hamilton; Christopher Greer; M. Isenhour
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