Analysis of effective mobility and hall effect mobility in high-<i>k</i> based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors

Name: Work Video:
Duration: 3 min 30 s
Muhammad Adi Negara; Dmitry Veksler; Jimin Huang; G. Ghibaudo; Paul K. Hurley; G. Bersuker; N. Goel; P. D. Kirsch
{'id': 'https://openalex.org/W1992788664', 'doi': 'https://doi.org/10.1063/1.3665033', 'title': 'Analysis of effective mobility and hall effect mobility in high-<i>k</i> based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors', 'display_name': 'Analysis of effective mobility and hall effect mobility in high-<i>k</i> based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors', 'publication_year': 2011, 'publication_date': '2011-12-05', 'ids': {'openalex': 'https://openalex.org/W1992788664', 'doi': 'https://doi.org/10.1063/1.3665033', 'mag': '1992788664'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1063/1.3665033', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S105243760', 'display_name': 'Applied Physics Letters', 'issn_l': '0003-6951', 'issn': ['0003-6951', '1077-3118', '1520-8842'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320257', 'host_organization_name': 'American Institute of Physics', 'host_organization_lineage': ['https://openalex.org/P4310320257'], 'host_organization_lineage_names': ['American Institute of Physics'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5110705431', 'display_name': 'Muhammad Adi Negara', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I27577105', 'display_name': 'University College Cork', 'ror': 'https://ror.org/03265fv13', 'country_code': 'IE', 'type': 'education', 'lineage': ['https://openalex.org/I27577105']}], 'countries': ['IE'], 'is_corresponding': False, 'raw_author_name': 'M. A. Negara', 'raw_affiliation_strings': ['1SEMATECH, 257 Fuller Road, Albany, New York 12203 and 2706 Montopolis Drive, Austin, Texas 78741, USA', '2IMEP, ENSERG, BP 257, 38016 Grenoble, France', 'University College Cork 3 Tyndall National Institute, , Lee Maltings, Cork, Ireland'], 'affiliations': [{'raw_affiliation_string': '1SEMATECH, 257 Fuller Road, Albany, New York 12203 and 2706 Montopolis Drive, Austin, Texas 78741, USA', 'institution_ids': []}, {'raw_affiliation_string': '2IMEP, ENSERG, BP 257, 38016 Grenoble, France', 'institution_ids': []}, {'raw_affiliation_string': 'University College Cork 3 Tyndall National Institute, , Lee Maltings, Cork, Ireland', 'institution_ids': ['https://openalex.org/I27577105']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5054135802', 'display_name': 'Dmitry Veksler', 'orcid': 'https://orcid.org/0000-0001-6082-1191'}, 'institutions': [], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'D. Veksler', 'raw_affiliation_strings': ['1SEMATECH, 257 Fuller Road, Albany, New York 12203 and 2706 Montopolis Drive, Austin, Texas 78741, USA'], 'affiliations': [{'raw_affiliation_string': '1SEMATECH, 257 Fuller Road, Albany, New York 12203 and 2706 Montopolis Drive, Austin, Texas 78741, USA', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5018254776', 'display_name': 'Jimin Huang', 'orcid': 'https://orcid.org/0000-0002-3501-3907'}, 'institutions': [], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'J. Huang', 'raw_affiliation_strings': ['1SEMATECH, 257 Fuller Road, Albany, New York 12203 and 2706 Montopolis Drive, Austin, Texas 78741, USA'], 'affiliations': [{'raw_affiliation_string': '1SEMATECH, 257 Fuller Road, Albany, New York 12203 and 2706 Montopolis Drive, Austin, Texas 78741, USA', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5011270757', 'display_name': 'G. Ghibaudo', 'orcid': 'https://orcid.org/0000-0001-9901-0679'}, 'institutions': [], 'countries': ['FR'], 'is_corresponding': False, 'raw_author_name': 'G. Ghibaudo', 'raw_affiliation_strings': ['2IMEP, ENSERG, BP 257, 38016 Grenoble, France'], 'affiliations': [{'raw_affiliation_string': '2IMEP, ENSERG, BP 257, 38016 Grenoble, France', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5053550415', 'display_name': 'Paul K. Hurley', 'orcid': 'https://orcid.org/0000-0001-5137-721X'}, 'institutions': [{'id': 'https://openalex.org/I27577105', 'display_name': 'University College Cork', 'ror': 'https://ror.org/03265fv13', 'country_code': 'IE', 'type': 'education', 'lineage': ['https://openalex.org/I27577105']}], 'countries': ['IE'], 'is_corresponding': False, 'raw_author_name': 'P. K. Hurley', 'raw_affiliation_strings': ['University College Cork 3 Tyndall National Institute, , Lee Maltings, Cork, Ireland'], 'affiliations': [{'raw_affiliation_string': 'University College Cork 3 Tyndall National Institute, , Lee Maltings, Cork, Ireland', 'institution_ids': ['https://openalex.org/I27577105']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5030704805', 'display_name': 'G. Bersuker', 'orcid': 'https://orcid.org/0000-0003-4461-1172'}, 'institutions': [], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'G. Bersuker', 'raw_affiliation_strings': ['1SEMATECH, 257 Fuller Road, Albany, New York 12203 and 2706 Montopolis Drive, Austin, Texas 78741, USA'], 'affiliations': [{'raw_affiliation_string': '1SEMATECH, 257 Fuller Road, Albany, New York 12203 and 2706 Montopolis Drive, Austin, Texas 78741, USA', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5023144434', 'display_name': 'N. Goel', 'orcid': 'https://orcid.org/0000-0002-1465-5767'}, 'institutions': [], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'N. Goel', 'raw_affiliation_strings': ['1SEMATECH, 257 Fuller Road, Albany, New York 12203 and 2706 Montopolis Drive, Austin, Texas 78741, USA'], 'affiliations': [{'raw_affiliation_string': '1SEMATECH, 257 Fuller Road, Albany, New York 12203 and 2706 Montopolis Drive, Austin, Texas 78741, USA', 'institution_ids': []}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5103009603', 'display_name': 'P. D. Kirsch', 'orcid': 'https://orcid.org/0000-0003-4430-3233'}, 'institutions': [], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'P. Kirsch', 'raw_affiliation_strings': ['1SEMATECH, 257 Fuller Road, Albany, New York 12203 and 2706 Montopolis Drive, Austin, Texas 78741, USA'], 'affiliations': [{'raw_affiliation_string': '1SEMATECH, 257 Fuller Road, Albany, New York 12203 and 2706 Montopolis Drive, Austin, Texas 78741, USA', 'institution_ids': []}]}], 'institution_assertions': [], 'countries_distinct_count': 3, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 0.643, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 13, 'citation_normalized_percentile': {'value': 0.808936, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 86, 'max': 87}, 'biblio': {'volume': '99', 'issue': '23', 'first_page': None, 'last_page': None}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10558', 'display_name': 'Advancements in Semiconductor Devices and Circuit Design', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10558', 'display_name': 'Advancements in Semiconductor Devices and Circuit Design', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T14117', 'display_name': 'Integrated Circuits and Semiconductor Failure Analysis', 'score': 0.9998, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/electron-mobility', 'display_name': 'Electron Mobility', 'score': 0.81935096}, {'id': 'https://openalex.org/keywords/charge-carrier-density', 'display_name': 'Charge-carrier density', 'score': 0.47708023}, {'id': 'https://openalex.org/keywords/gate-voltage', 'display_name': 'Gate voltage', 'score': 0.41031456}], 'concepts': [{'id': 'https://openalex.org/C106782819', 'wikidata': 'https://www.wikidata.org/wiki/Q6501076', 'display_name': 'Electron mobility', 'level': 2, 'score': 0.81935096}, {'id': 'https://openalex.org/C132882038', 'wikidata': 'https://www.wikidata.org/wiki/Q1617706', 'display_name': 'Induced high electron mobility transistor', 'level': 5, 'score': 0.78177476}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.6132492}, {'id': 'https://openalex.org/C108225325', 'wikidata': 'https://www.wikidata.org/wiki/Q11456', 'display_name': 'Semiconductor', 'level': 2, 'score': 0.60493964}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.58139056}, {'id': 'https://openalex.org/C147120987', 'wikidata': 'https://www.wikidata.org/wiki/Q2225', 'display_name': 'Electron', 'level': 2, 'score': 0.5704727}, {'id': 'https://openalex.org/C26873012', 'wikidata': 'https://www.wikidata.org/wiki/Q214781', 'display_name': 'Condensed matter physics', 'level': 1, 'score': 0.5367426}, {'id': 'https://openalex.org/C134112204', 'wikidata': 'https://www.wikidata.org/wiki/Q10656', 'display_name': 'Hall effect', 'level': 3, 'score': 0.52961123}, {'id': 'https://openalex.org/C30066665', 'wikidata': 'https://www.wikidata.org/wiki/Q164399', 'display_name': 'Capacitance', 'level': 3, 'score': 0.49195787}, {'id': 'https://openalex.org/C109724073', 'wikidata': 'https://www.wikidata.org/wiki/Q1757819', 'display_name': 'Charge-carrier density', 'level': 3, 'score': 0.47708023}, {'id': 'https://openalex.org/C195370968', 'wikidata': 'https://www.wikidata.org/wiki/Q1754002', 'display_name': 'Threshold voltage', 'level': 4, 'score': 0.47238064}, {'id': 'https://openalex.org/C2779851234', 'wikidata': 'https://www.wikidata.org/wiki/Q50690', 'display_name': 'Oxide', 'level': 2, 'score': 0.46224904}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.43310016}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.4314209}, {'id': 'https://openalex.org/C2984119601', 'wikidata': 'https://www.wikidata.org/wiki/Q1754002', 'display_name': 'Gate voltage', 'level': 4, 'score': 0.41031456}, {'id': 'https://openalex.org/C69990965', 'wikidata': 'https://www.wikidata.org/wiki/Q65402698', 'display_name': 'Electrical resistivity and conductivity', 'level': 2, 'score': 0.3109661}, {'id': 'https://openalex.org/C162057924', 'wikidata': 'https://www.wikidata.org/wiki/Q1617706', 'display_name': 'High-electron-mobility transistor', 'level': 4, 'score': 0.2863409}, {'id': 'https://openalex.org/C185592680', 'wikidata': 'https://www.wikidata.org/wiki/Q2329', 'display_name': 'Chemistry', 'level': 0, 'score': 0.26395112}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.16744241}, {'id': 'https://openalex.org/C57863236', 'wikidata': 'https://www.wikidata.org/wiki/Q1130571', 'display_name': 'Doping', 'level': 2, 'score': 0.09805837}, {'id': 'https://openalex.org/C17525397', 'wikidata': 'https://www.wikidata.org/wiki/Q176140', 'display_name': 'Electrode', 'level': 2, 'score': 0.063224584}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C147789679', 'wikidata': 'https://www.wikidata.org/wiki/Q11372', 'display_name': 'Physical chemistry', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1063/1.3665033', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S105243760', 'display_name': 'Applied Physics Letters', 'issn_l': '0003-6951', 'issn': ['0003-6951', '1077-3118', '1520-8842'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320257', 'host_organization_name': 'American Institute of Physics', 'host_organization_lineage': ['https://openalex.org/P4310320257'], 'host_organization_lineage_names': ['American Institute of Physics'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'score': 0.8, 'display_name': 'Affordable and clean energy', 'id': 'https://metadata.un.org/sdg/7'}], 'grants': [{'funder': 'https://openalex.org/F4320321001', 'funder_display_name': 'National Natural Science Foundation of China', 'award_id': '08/US/I1546'}], 'datasets': [], 'versions': [], 'referenced_works_count': 11, 'referenced_works': ['https://openalex.org/W1562207100', 'https://openalex.org/W1622302217', 'https://openalex.org/W1624907158', 'https://openalex.org/W1652463614', 'https://openalex.org/W1778822350', 'https://openalex.org/W1980340456', 'https://openalex.org/W2012168675', 'https://openalex.org/W2013479886', 'https://openalex.org/W2032578512', 'https://openalex.org/W2039411562', 'https://openalex.org/W2155864562'], 'related_works': ['https://openalex.org/W3122415659', 'https://openalex.org/W2371809433', 'https://openalex.org/W2170909595', 'https://openalex.org/W2078939112', 'https://openalex.org/W2071096429', 'https://openalex.org/W2058680910', 'https://openalex.org/W2023947540', 'https://openalex.org/W2022092968', 'https://openalex.org/W2011772972', 'https://openalex.org/W1994320036'], 'abstract_inverted_index': {'We': [0], 'report': [1], 'an': [2, 46], 'In0.75Ga0.25As': [3], 'metal-oxide-semiconductor': [4], 'high-electron-mobility': [5], 'transistor': [6], 'with': [7], 'a': [8, 16, 54], 'peak': [9], 'Hall': [10, 30], 'mobility': [11, 37], 'of': [12, 19, 25, 48, 57, 62, 74, 88], '8300': [13], 'cm2/Vs': [14], 'at': [15, 98], 'carrier': [17, 51], 'density': [18, 65], '2': [20], '×': [21], '1012': [22], 'cm−2.': [23], 'Comparison': [24], 'split': [26], 'capacitance-voltage': [27], '(CV)': [28], 'and': [29, 53], 'Effect': [31], 'measurements': [32], 'for': [33], 'the': [34, 41, 49, 63, 72, 75, 79, 93], 'extracted': [35], 'electron': [36, 58, 64], 'have': [38], 'shown': [39], 'that': [40], 'split-CV': [42, 76], 'can': [43], 'lead': [44], 'to': [45], 'overestimation': [47], 'channel': [50], 'concentration': [52], 'corresponding': [55], 'underestimation': [56], 'mobility.': [59], 'An': [60], 'analysis': [61, 80], 'dependence': [66], 'versus': [67], 'gate': [68, 100], 'voltage': [69], 'allows': [70], 'quantifying': [71], 'inaccuracy': [73], 'technique.': [77], 'Finally,': [78], 'supported': [81], 'by': [82], 'multi-channel': [83], 'conduction': [84], 'simulations': [85], 'indicates': [86], 'presence': [87], 'carriers': [89], 'spill': [90], 'over': [91], 'into': [92], 'top': [94], 'InP': [95], 'barrier': [96], 'layer': [97], 'high': [99], 'voltages.': [101]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W1992788664', 'counts_by_year': [{'year': 2024, 'cited_by_count': 1}, {'year': 2023, 'cited_by_count': 1}, {'year': 2022, 'cited_by_count': 2}, {'year': 2021, 'cited_by_count': 2}, {'year': 2019, 'cited_by_count': 2}, {'year': 2016, 'cited_by_count': 2}, {'year': 2014, 'cited_by_count': 1}, {'year': 2012, 'cited_by_count': 2}], 'updated_date': '2024-12-17T20:59:50.899597', 'created_date': '2016-06-24'}
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