Title: Gate effect on Hall voltage in a InSb/FM device
Abstract: A gate controlled Hall effect device was fabricated, in which a ferromagnetic element was deposited on top of insulated InSb Hall cross. It was shown that the magnetic fringe fields from a ferromagnet can effectively generate Hall voltage and create hysteresis in the Hall resistance. The Hall voltage was amplified by applying gate voltage. The increase was due to the reduction of carrier density induced by the gate confinement effect.
Publication Year: 2005
Publication Date: 2005-01-01
Language: en
Type: article
Indexed In: ['crossref']
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