Title: Enhanced Hall voltage in a gate-controlled InSb Hall device
Abstract: We present an enhanced Hall voltage from the gate-controlled Hall device incorporating a micron-scaled InSb semiconductor cross junction and a single ferromagnetic element. Magnetic fringe field at an edge of the ferrogmanetic element gives rise to the Hall voltage, which shows hysteretic behavior upon magnetic-field sweep. The Hall effect is amplified by a factor of ∼40% when a gate voltage of −25V is applied. The increase is largely attributed to the reduction of carrier density affected by the gate confinement effect. The InSb Hall device controlled by gate voltage demonstrates a possible application for active nonvolatile memory cells and logic gate.
Publication Year: 2005
Publication Date: 2005-05-06
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 8
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