Title: A replacement of high-<i>k</i> process for CMOS transistor by atomic layer deposition
Abstract: A replacement of high-k process was implemented on an independent double gate FinFET, following the ordinary gate-first process with minor modifications. The present scheme involves neither exotic materials nor unprecedented processing. After the source/drain process, the sacrificial gate oxide was selectively substituted with amorphous Ta2O5 via conformal plasma enhanced atomic layer deposition. The present gate-first gate-dielectric-last scheme combines the advantages of the process and design simplicity of the gate-first approach and the control of the effective gate workfunction and the interfacial oxide of the gate-dielectric-last approach. Electrical characterization data and cross-sectional images are provided as evidence of the concept.
Publication Year: 2013
Publication Date: 2013-07-05
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 4
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