Plasma Chemistry

Name: Work Video:
Duration: 3 min 30 s
Description: Abstract The sections in this article are Model System: F 2 ‐Based Etching of SiO 2 Etching of Si Etching of Al and Al alloys Etching of Refractory Metals and Silicides Etching of Photoresist and Polymers Loading and Aspect‐Ratio‐Dependent Etching Damage and Residues Plasma Analytical Techniques Compound Semiconductor Etching
S. J. Pearton
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