Title: The Properties of the In<sub>x</sub>Ga<sub>1-x</sub>Sb Epilayer Grown on GaAs Substrate by Metalorganic Chemical Vapor Deposition Using the Interfacial Misfit Dislocation Technique
Abstract: 2016 International Conference on Solid State Devices and Materials,The Properties of the In<sub>x</sub>Ga<sub>1-x</sub>Sb Epilayer Grown on GaAs Substrate by Metalorganic Chemical Vapor Deposition Using the Interfacial Misfit Dislocation Technique
Publication Year: 2016
Publication Date: 2016-09-28
Language: en
Type: article
Indexed In: ['crossref']
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