Title: Epitaxial growth of GaN on sapphire substrate by LP-MOVPE
Abstract: Using horizontal reactor LP-MOVPE,the high quality GaN epitaxial lay er is grown on C-plane and R-plane sapphire substrate.The effects of gas flow distrlbu tion and vapour phase reaction in the reactive chamber on the GaN epitaxial growth are dis cussed;and a plausible model is proposed to explain the effect of substrate orientation on the epitaxial GaN surface morphology.
Publication Year: 1996
Publication Date: 1996-01-01
Language: en
Type: article
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