Title: Growth of GaAs epitaxial layers prepared in the laboratory with an integrated safety MOCVD system
Abstract: Details of the integrated safety system for the MOCVD laboratory are discussed. Growth behaviors of gallium-arsenide epitaxial layers prepared by this MOCVD system are given. Mirror-surface thin GaAs layers were obtained at substrate temperatures as low as 500°C. Epitaxially grown GaAs layers on heavily In-doped GaAs substrates exhibited particular phenomena which revealed the occurence of coherent growth. These phenomena were attributed to the difference in the lattice constant value between the In-doped substrate with the larger value and the undoped GaAs with the smaller value.
Publication Year: 1988
Publication Date: 1988-09-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 5
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