Title: Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories
Abstract:NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density nonvolatile storage. The main obstacles to practical application are the large and hardly scalable reset (pro...NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density nonvolatile storage. The main obstacles to practical application are the large and hardly scalable reset (programming) current and the reliability at high temperature. This letter studies temperature-accelerated data retention in RRAM cells from both experimental and theoretical standpoints, addressing the size/nature of the conductive filament and clarifying the tradeoff between data retention and reset current.Read More
Publication Year: 2010
Publication Date: 2010-03-05
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 122
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