Title: Resistive Random Access Memory (ReRAM) Based on Metal Oxides
Abstract:In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochem...In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief historical overview of the research in this field. We also provide a technological overview and the epoch-making achievements, followed by an account of the current understanding of both bipolar and unipolar ReRAM operations. Finally, we summarize the challenges facing the ReRAM technology as it moves toward the beyond-2X-nm generation of nonvolatile memories and the so-called beyond complementary metal-oxide-semiconductor (CMOS) device.Read More
Publication Year: 2010
Publication Date: 2010-10-27
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 973
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