Abstract: A gate turn-off thyristor (known as a GTO) is a three terminal power semiconductor device. GTOs belong to a thyristor family having a four-layer structure. GTOs also belong to a group of power semiconductor devices that have the ability for full control of on- and off-states via the control terminal (gate). The basic structure of a GTO consists of a four-layer-PNPN semiconductor device, which is very similar in construction to a thyristor. It has several design features which allow it to be turned on and off by reversing the polarity of the gate signal. In the on-state the GTO operates in a similar manner to the thyristor. If the anode current remains above the holding current level then positive gate drive may be reduced to zero and the GTO will remain in conduction. A GTO may be modeled with two transistors. However, a GTO model consisting of two thyristors, which are connected in parallel, yield improved on-state, turn-on, and turn-off characteristics.
Publication Year: 2011
Publication Date: 2011-01-01
Language: en
Type: book-chapter
Indexed In: ['crossref']
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