Title: Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor
Abstract: Novel reverse-conducting IGBT (RC-IGBT) with anti-parallel MOS controlled thyristor (MCT) is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anode-short effect is eliminated and the voltage snapback problem is solved. Furthermore, the snapback-free characteristics can be realized in novel RC-IGBT by a single cell with a width of 10 μm with more uniform current distribution. As numerical simulations show, compared with the conventional RC-IGBT, the forward conduction voltage is reduced by 35% while the reverse conduction voltage is reduced by 50% at J = 150 A/cm2.
Publication Year: 2014
Publication Date: 2014-07-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 3
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