Title: A lateral MOS-controlled thyristor-enhanced insulated gate bipolar transistor
Abstract: A new lateral MOS controlled thyristor enhanced insulated gate bipolar transistor (LTE-IGBT) is presented. The current carrying capability of the device is enhanced by a thyristor mode of operation. Furthermore, the LTE-IGBT exhibits higher latch-up current and voltage without any loss of switching performance. The advantage of the LTE-IGBT is more significantly enhanced in a multi-cathode cell configuration in the double epitaxial layer dielectric isolation (DELDI) technology. Detailed numerical simulations have been used to analyze the device operation. The results reveal that the incorporated thyristor can be effectively triggered on at a low anode voltage and an embedded p-buried layer enables suppression of the parasitic latch-up.
Publication Year: 1999
Publication Date: 1999-10-01
Language: en
Type: article
Indexed In: ['crossref']
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