Title: Characteristics of Free-Standing GaN Substrates grown by Hydride Vapor Phase Epitaxy
Abstract: Free-standing GaN single crystal substrates have been obtained by growing thick GaN epitaxial layers on (0001) sapphire substrates using hydride vapor phase epitaxy (HVPE) method. After growing the GaN thick film of 200 , a free-standing GaN with a size of 10 mm 10 mm were obtained by mechanical polishing process to remove sapphire substrate. Crack-free GaN substrates have been obtained by GaCl pre-treatment prior to the growth of GaN epitaxial layers. Properties of free-standing GaN substrates have been compared with those of lateral epitaxial overgrowth (LEO) GaN films by double-crystal x-ray diffraction (DC-XRD), cathodoluminescence (CL) and photoluminescence (PL) measurements.
Publication Year: 2000
Publication Date: 2000-01-01
Language: en
Type: article
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