Title: Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy
Abstract: This paper presents the growth of thick semipolar {10-11}, {11-22}, and {20-21} GaN layers on <i>n</i>, <i>r</i>, and {22-43} patterned sapphire substrates (PSSs), respectively, by hydride vapor phase epitaxy. The reduction rate of the dislocation density varied with growth planes. For {10-11} GaN layers, the dislocation density drastically decreased at over 100 μm, which was as fast the reduction rate as in the case of the <i>c</i>-plane. It was revealed that the reduction rate of the dislocation density could be controlled by the proper selection of the growth plane. We obtained a freestanding GaN of 2 inch diameter. Thick GaN growth led to the self-separation of the GaN layer from the PSS during cooling process. The separation plane formed at the interface between GaN and PSS, which is different from the case of a conventional <i>c</i>-plane GaN/sapphire. The separationability of the GaN layer from the PSS depended on the selective growth area of the sapphire sidewall.
Publication Year: 2013
Publication Date: 2013-03-04
Language: en
Type: article
Indexed In: ['crossref']
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