Title: Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy
Abstract: Thick gallium nitride films 250–350 µm in thickness were grown on 2-inch-diameter (0001) sapphire wafers by hydride vapor phase epitaxy. The size of the free-standing GaN substrates without cracks separated from the sapphire substrates by laser processing was equal to that of the initial sapphire substrates. The origin of bowing and the broad photoluminescence (PL) spectra of GaN films was considered the difference in the residual strain between the front and bottom surfaces caused by threading dislocations.
Publication Year: 2000
Publication Date: 2000-11-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 156
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot