Abstract: β-SiC MESFET and buried-gate JFET structures have been fabricated and evaluated. Both structures employ an epitaxial n-on-p SiC layer grown by chemical vapor deposition on a p-type Si
Publication Year: 1987
Publication Date: 1987-09-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 28
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