Title: An improved junction field-effect transistor static model for integrated circuit simulation
Abstract: A physics-based junction field-effect transistor (JFET) static model for integrated circuit simulation is developed. The model covers the behavior of the linear and saturation current regions without requiring fitting parameters. Subthreshold characteristics in the saturation region are also included in the model. Excellent agreement is obtained when the model is compared with experimental data.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Publication Year: 1990
Publication Date: 1990-07-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 15
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