Title: Short-channel GaAs FET fabricated like a MESFET but operating like a JFET
Abstract: Normally-on GaAs field-effect transistors (FETs) having 1 μm gate lengths and 4 μm channel lengths were fabricated in structures grown by molecular beam epitaxy (MBE). The unique part of this device is the very thin p+/n+ structure used to replace the conventional Schottky barriers. The device fabrication procedure is identical to that of a Schottky barrier FET (MESFET), but the devices exhibit characteristics similar to that of a junction field-effect transistor (JFET). This new device, the ‘camel diode gate FET’, is expected to have applications in both logic and power devices.
Publication Year: 1982
Publication Date: 1982-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 3
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