Title: In situ transmission and reflection electron microscopy studies of palladium silicide islands grown on silicon (111) surface
Abstract: Pd was deposited onto Si (1 1 1) 7×7 surface at about 700 K inside an ultrahigh vacuum transmission electron microscope. In reflection electron microscopy (REM) observation of Pd-deposition process, it was indicated that Pd silicide islands were formed by involving two kinds of growth behavior. It was found from plan view transmission electron microscopy (TEM) that the islands have two kinds of shape, one round and the other rectangular (one-dimensional). Comprehensive TEM/REM and diffraction analysis revealed that the two kinds of the Pd silicide islands with different shape and atomic structure grew independently.
Publication Year: 2002
Publication Date: 2002-04-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 2
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