Title: Atomic Processes during Crystal Growth Studied by Reflection High‐Energy Electron Diffraction
Abstract:Abstract After a short retrospect on the development of the electron diffraction techniques it is shown that the atomic‐scale morphology of the crystal surface and growth processes on it can be studie...Abstract After a short retrospect on the development of the electron diffraction techniques it is shown that the atomic‐scale morphology of the crystal surface and growth processes on it can be studied in detail during molecular beam epitaxy (MBE) by reflection high‐energy electron diffraction (RHEED). This is demonstrated for the evolution of the terrace‐step‐structure of the singular GaAs (001) surface during growth and after growth interruption and for the attachment of Si atoms at misorientation steps on vicinal GaAs (001) surfaces.Read More
Publication Year: 1993
Publication Date: 1993-01-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 3
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot