Title: Effect of temperature errors on accuracy of deep traps parameters obtained from transient measurements
Abstract:The procedure of determination of deep traps parameters by both deep level transient capacitance spectroscopy (DLTS) and photoinduced transient spectroscopy (PITS) is based on Arrhenius plot illustrat...The procedure of determination of deep traps parameters by both deep level transient capacitance spectroscopy (DLTS) and photoinduced transient spectroscopy (PITS) is based on Arrhenius plot illustrating the dependence of thermal emission rates as a function of temperature. In this article the effect of temperature measurement inaccuracy on the values of activation energy and capture cross- section obtained from the Arrhenius plot is analyzed. The inaccurate values of temperature involve both a change of slope and shift of the Arrhenius plots along vertical axis. The practical application of the analysis is exemplified by estimation of the temperature errors responsible for the shift of Arrhenius plots related to the center A in irradiated silicon. This article addresses the issue of temperature errors in DLTS and PITS measurements from the metrological point of view.Read More
Publication Year: 1999
Publication Date: 1999-08-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 4
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