Title: Planar InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition
Abstract: Planar InGaAs/InP heterostructure photodiodes have been fabricated from structures grown by atmospheric pressure metalorganic chemical vapor deposition. Diffused p-n junction devices of 75µm diameter have low dark currents (∼20nA at -10V), good quantum efficiencies of ∼50% (without AR coatings), and very high speed response (∼35ps).
Publication Year: 1985
Publication Date: 1985-01-01
Language: en
Type: article
Indexed In: ['crossref']
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