Title: <title>High-performance InGaAs PIN and APD (avalanche photdiode) detectors for 1.54 um eyesafe rangefinding</title>
Abstract: The structure and device properties of indium gallium arsenide (InGaAs) pin photodiodes and avalanche photodiodes (APDs) are described. Quantum efficiencies above 85% at 1.54 micrometers , dark current densities near 1 (mu) A/cm2 (-5 V, 300 K) and 3 mm diameter shunt resistances (10 mV, 300 K) above 10 megohms have been observed. Avalanche gains above 20 have been measured with multiplied primary dark currents below 7 nA. Extended wavelength InxGa1-xAs (.53 < x < .80) pin detectors are also described with 70% quantum efficiency and room temperature RoA products above 2000 ohm -cm2 at 1.8 micrometers , 900 ohm -cm2 at 2.1 micrometers and 15 ohm -cm2 at 2.6 micrometers .
Publication Year: 1991
Publication Date: 1991-04-01
Language: en
Type: article
Indexed In: ['crossref']
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