Title: Effect of structure on the quantum efficiency and R0A product of lead-tin chalcogenide photodiodes
Abstract: The conditions are determined under which the quantum efficiency of lead-tin chalcogenide photodiodes achieves its maximum. The effect of the structure of photodiodes on their quantum efficiency and on the R0A product has been analysed. It has been shown that at a surface recombination velocity of 0 ⩽ s1 ⩽ 104 m/sec and depth of the junction not less than 0.2L (where L is the minority carrier diffusion length) the product R0A differs from (R0A)0 for diodes with thick regions on both sides of the junction by a factor of 0.3–2.
Publication Year: 1982
Publication Date: 1982-07-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 21
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