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{'id': 'https://openalex.org/W2075791734', 'doi': 'https://doi.org/10.1002/(sici)1520-6432(199905)82:5<36::aid-ecjb5>3.0.co;2-y', 'title': 'Performance and application impact of widegap power semiconductor devices focusing on SiC', 'display_name': 'Performance and application impact of widegap power semiconductor devices focusing on SiC', 'publication_year': 1999, 'publication_date': '1999-05-01', 'ids': {'openalex': 'https://openalex.org/W2075791734', 'doi': 'https://doi.org/10.1002/(sici)1520-6432(199905)82:5<36::aid-ecjb5>3.0.co;2-y', 'mag': '2075791734'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1002/(sici)1520-6432(199905)82:5<36::aid-ecjb5>3.0.co;2-y', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4210198954', 'display_name': 'Electronics and Communications in Japan (Part II Electronics)', 'issn_l': '1520-6432', 'issn': ['1520-6432', '8756-663X'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320595', 'host_organization_name': 'Wiley', 'host_organization_lineage': ['https://openalex.org/P4310320595'], 'host_organization_lineage_names': ['Wiley'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5113948884', 'display_name': 'Yoshitaka Sugawara', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I2800996768', 'display_name': 'Kansai Electric Power (Japan)', 'ror': 'https://ror.org/03xrg8731', 'country_code': 'JP', 'type': 'company', 'lineage': ['https://openalex.org/I2800996768']}], 'countries': ['JP'], 'is_corresponding': True, 'raw_author_name': 'Yoshitaka Sugawara', 'raw_affiliation_strings': ['Technical Research Center, Kansai Electric Power Corporation, Nakouji, Amagasaki, Japan 661'], 'affiliations': [{'raw_affiliation_string': 'Technical Research Center, Kansai Electric Power Corporation, Nakouji, Amagasaki, Japan 661', 'institution_ids': ['https://openalex.org/I2800996768']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': ['https://openalex.org/A5113948884'], 'corresponding_institution_ids': ['https://openalex.org/I2800996768'], 'apc_list': None, 'apc_paid': None, 'fwci': 0.761, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 5, 'citation_normalized_percentile': {'value': 0.536315, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 72, 'max': 73}, 'biblio': {'volume': '82', 'issue': '5', 'first_page': '36', 'last_page': '45'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10361', 'display_name': 'Silicon Carbide Semiconductor Technologies', 'score': 0.9998, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10361', 'display_name': 'Silicon Carbide Semiconductor Technologies', 'score': 0.9998, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11102', 'display_name': 'HVDC Systems and Fault Protection', 'score': 0.9819, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11661', 'display_name': 'Copper Interconnects and Reliability', 'score': 0.9754, 'subfield': {'id': 'https://openalex.org/subfields/2504', 'display_name': 'Electronic, Optical and Magnetic Materials'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/power-module', 'display_name': 'Power module', 'score': 0.41873616}, {'id': 'https://openalex.org/keywords/wide-bandgap-semiconductor', 'display_name': 'Wide-bandgap semiconductor', 'score': 0.41686782}], 'concepts': [{'id': 'https://openalex.org/C108225325', 'wikidata': 'https://www.wikidata.org/wiki/Q11456', 'display_name': 'Semiconductor', 'level': 2, 'score': 0.74938124}, {'id': 'https://openalex.org/C79635011', 'wikidata': 'https://www.wikidata.org/wiki/Q175805', 'display_name': 'Semiconductor device', 'level': 3, 'score': 0.74330413}, {'id': 'https://openalex.org/C129014197', 'wikidata': 'https://www.wikidata.org/wiki/Q906544', 'display_name': 'Power semiconductor device', 'level': 3, 'score': 0.6981205}, {'id': 'https://openalex.org/C61696701', 'wikidata': 'https://www.wikidata.org/wiki/Q770766', 'display_name': 'Engineering physics', 'level': 1, 'score': 0.63345146}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.5751308}, {'id': 'https://openalex.org/C163258240', 'wikidata': 'https://www.wikidata.org/wiki/Q25342', 'display_name': 'Power (physics)', 'level': 2, 'score': 0.5671321}, {'id': 'https://openalex.org/C2989315489', 'wikidata': 'https://www.wikidata.org/wiki/Q2659774', 'display_name': 'Semiconductor materials', 'level': 3, 'score': 0.48927662}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.42983064}, {'id': 'https://openalex.org/C141812795', 'wikidata': 'https://www.wikidata.org/wiki/Q7236534', 'display_name': 'Power module', 'level': 3, 'score': 0.41873616}, {'id': 'https://openalex.org/C189278905', 'wikidata': 'https://www.wikidata.org/wiki/Q2157708', 'display_name': 'Wide-bandgap semiconductor', 'level': 2, 'score': 0.41686782}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.3864439}, {'id': 'https://openalex.org/C24326235', 'wikidata': 'https://www.wikidata.org/wiki/Q126095', 'display_name': 'Electronic engineering', 'level': 1, 'score': 0.32189202}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.19699407}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.18706724}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.09507406}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.070904404}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1002/(sici)1520-6432(199905)82:5<36::aid-ecjb5>3.0.co;2-y', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4210198954', 'display_name': 'Electronics and Communications in Japan (Part II Electronics)', 'issn_l': '1520-6432', 'issn': ['1520-6432', '8756-663X'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320595', 'host_organization_name': 'Wiley', 'host_organization_lineage': ['https://openalex.org/P4310320595'], 'host_organization_lineage_names': ['Wiley'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'id': 'https://metadata.un.org/sdg/7', 'display_name': 'Affordable and clean energy', 'score': 0.51}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 3, 'referenced_works': ['https://openalex.org/W2031839685', 'https://openalex.org/W4240905847', 'https://openalex.org/W619015046'], 'related_works': ['https://openalex.org/W4313015110', 'https://openalex.org/W4200190098', 'https://openalex.org/W3207919737', 'https://openalex.org/W3009018527', 'https://openalex.org/W2568603120', 'https://openalex.org/W2129871830', 'https://openalex.org/W2125881044', 'https://openalex.org/W2122923768', 'https://openalex.org/W2043726044', 'https://openalex.org/W1508568262'], 'abstract_inverted_index': {'Widegap': [0], 'semiconductors': [1], 'generally': [2], 'have': [3], 'better': [4], 'material': [5, 22, 47], 'constants': [6], 'than': [7], 'Si,': [8], 'and': [9, 48, 83, 104], 'it': [10], 'is': [11, 102], 'expected': [12, 50, 62], 'that': [13], 'semiconductor': [14, 68, 100], 'power': [15, 67, 71, 81, 99], 'devices': [16, 54, 69, 101], 'with': [17, 59], 'innovative': [18], 'performance': [19, 51], 'beyond': [20], 'the': [21, 46, 49, 78, 90], 'limits': [23], 'of': [24, 45, 52, 64, 80, 85, 95, 97, 107], 'Si': [25], 'will': [26], 'be': [27], 'realized.': [28], 'This': [29], 'paper': [30], 'focuses': [31], 'on': [32, 89], 'SiC': [33, 53, 66, 98], 'devices,': [34], 'in': [35, 57, 75], 'which': [36], 'remarkable': [37], 'progress': [38], 'has': [39], 'recently': [40], 'been': [41], 'made.': [42], 'The': [43, 61, 93], 'characteristics': [44], 'are': [55, 73, 110], 'discussed': [56, 74], 'comparison': [58], 'Si.': [60], 'results': [63], 'applying': [65], 'to': [70], 'conversion': [72], 'detail': [76], 'from': [77], 'viewpoints': [79], 'loss': [82], 'reduction': [84], 'equipment': [86], 'volume,': [87], 'based': [88], 'calculated': [91], 'examples.': [92], 'state': [94], 'development': [96, 109], 'reviewed,': [103], 'technical': [105], 'problems': [106], 'device': [108], 'discussed.': [111], '©': [112], '1999': [113, 123], 'Scripta': [114], 'Technica,': [115], 'Electron': [116], 'Comm': [117], 'Jpn': [118], 'Pt': [119], '2,': [120], '82(5):': [121], '36–45,': [122]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2075791734', 'counts_by_year': [{'year': 2013, 'cited_by_count': 2}], 'updated_date': '2024-12-16T19:56:52.012483', 'created_date': '2016-06-24'}