Publication Information

{'id': 'https://openalex.org/W2122923768', 'doi': 'https://doi.org/10.1109/ispsd.2007.4294977', 'title': 'Vertical Power Dissipation Characteristics of Semiconductor Power Devices', 'display_name': 'Vertical Power Dissipation Characteristics of Semiconductor Power Devices', 'publication_year': 2007, 'publication_date': '2007-05-01', 'ids': {'openalex': 'https://openalex.org/W2122923768', 'doi': 'https://doi.org/10.1109/ispsd.2007.4294977', 'mag': '2122923768'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/ispsd.2007.4294977', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'proceedings-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5102376385', 'display_name': 'Young Suk Chung', 'orcid': None}, 'institutions': [], 'countries': [], 'is_corresponding': True, 'raw_author_name': 'Young S. Chung', 'raw_affiliation_strings': ['Freescale Semicond. Inc., Tempe'], 'affiliations': [{'raw_affiliation_string': 'Freescale Semicond. Inc., Tempe', 'institution_ids': []}]}], 'institution_assertions': [], 'countries_distinct_count': 0, 'institutions_distinct_count': 0, 'corresponding_author_ids': ['https://openalex.org/A5102376385'], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 0.39, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 1, 'citation_normalized_percentile': {'value': 0.273542, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 63, 'max': 70}, 'biblio': {'volume': '17', 'issue': None, 'first_page': '241', 'last_page': '244'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10361', 'display_name': 'Silicon Carbide Semiconductor Technologies', 'score': 0.9996, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10361', 'display_name': 'Silicon Carbide Semiconductor Technologies', 'score': 0.9996, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11444', 'display_name': 'Electromagnetic Compatibility and Noise Suppression', 'score': 0.9935, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10175', 'display_name': 'Advanced DC-DC Converters', 'score': 0.9922, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/ldmos', 'display_name': 'LDMOS', 'score': 0.892967}, {'id': 'https://openalex.org/keywords/power-module', 'display_name': 'Power module', 'score': 0.61511993}, {'id': 'https://openalex.org/keywords/power-density', 'display_name': 'Power density', 'score': 0.4788863}], 'concepts': [{'id': 'https://openalex.org/C31672976', 'wikidata': 'https://www.wikidata.org/wiki/Q4042432', 'display_name': 'LDMOS', 'level': 4, 'score': 0.892967}, {'id': 'https://openalex.org/C135402231', 'wikidata': 'https://www.wikidata.org/wiki/Q898440', 'display_name': 'Dissipation', 'level': 2, 'score': 0.78075933}, {'id': 'https://openalex.org/C129014197', 'wikidata': 'https://www.wikidata.org/wiki/Q906544', 'display_name': 'Power semiconductor device', 'level': 3, 'score': 0.68073064}, {'id': 'https://openalex.org/C163258240', 'wikidata': 'https://www.wikidata.org/wiki/Q25342', 'display_name': 'Power (physics)', 'level': 2, 'score': 0.6458514}, {'id': 'https://openalex.org/C114834414', 'wikidata': 'https://www.wikidata.org/wiki/Q15477170', 'display_name': 'Thermal management of electronic devices and systems', 'level': 2, 'score': 0.6210484}, {'id': 'https://openalex.org/C141812795', 'wikidata': 'https://www.wikidata.org/wiki/Q7236534', 'display_name': 'Power module', 'level': 3, 'score': 0.61511993}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.6137012}, {'id': 'https://openalex.org/C79635011', 'wikidata': 'https://www.wikidata.org/wiki/Q175805', 'display_name': 'Semiconductor device', 'level': 3, 'score': 0.5958394}, {'id': 'https://openalex.org/C108225325', 'wikidata': 'https://www.wikidata.org/wiki/Q11456', 'display_name': 'Semiconductor', 'level': 2, 'score': 0.54856485}, {'id': 'https://openalex.org/C21881925', 'wikidata': 'https://www.wikidata.org/wiki/Q3503313', 'display_name': 'Power density', 'level': 3, 'score': 0.4788863}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.4308088}, {'id': 'https://openalex.org/C24326235', 'wikidata': 'https://www.wikidata.org/wiki/Q126095', 'display_name': 'Electronic engineering', 'level': 1, 'score': 0.42111444}, {'id': 'https://openalex.org/C41008148', 'wikidata': 'https://www.wikidata.org/wiki/Q21198', 'display_name': 'Computer science', 'level': 0, 'score': 0.35901272}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.34004804}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.30649966}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.18775961}, {'id': 'https://openalex.org/C78519656', 'wikidata': 'https://www.wikidata.org/wiki/Q101333', 'display_name': 'Mechanical engineering', 'level': 1, 'score': 0.17246604}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.1344848}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.0788472}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C159985019', 'wikidata': 'https://www.wikidata.org/wiki/Q181790', 'display_name': 'Composite material', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C97355855', 'wikidata': 'https://www.wikidata.org/wiki/Q11473', 'display_name': 'Thermodynamics', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/ispsd.2007.4294977', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'id': 'https://metadata.un.org/sdg/7', 'score': 0.85, 'display_name': 'Affordable and clean energy'}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 3, 'referenced_works': ['https://openalex.org/W2127144418', 'https://openalex.org/W2538837483', 'https://openalex.org/W2998559157'], 'related_works': ['https://openalex.org/W4313015110', 'https://openalex.org/W3009018527', 'https://openalex.org/W2492615372', 'https://openalex.org/W2275981012', 'https://openalex.org/W2141348007', 'https://openalex.org/W2129871830', 'https://openalex.org/W2125881044', 'https://openalex.org/W2122923768', 'https://openalex.org/W2029699094', 'https://openalex.org/W1975658814'], 'abstract_inverted_index': {'A': [0], 'major': [1], 'challenge': [2], 'in': [3, 12, 52], 'the': [4], 'semiconductor': [5], 'power': [6, 20, 34], 'device': [7, 55], 'technology': [8], 'with': [9, 40], 'continuing': [10], 'shrink': [11], 'feature': [13], 'sizes': [14], 'and': [15, 22, 43, 48], 'its': [16], 'circuit': [17], 'implementation': [18], 'is': [19], 'density': [21], 'heat': [23], 'build-up': [24], 'related': [25], 'problems.': [26], 'This': [27], 'paper': [28], 'discusses': [29], 'a': [30], 'significance': [31], 'of': [32, 37, 54], 'vertical': [33], 'dissipation': [35], 'characteristics': [36], 'LDMOS': [38], 'devices': [39], 'investigating': [41], 'electrical': [42], 'thermal': [44], 'behaviors': [45], 'under': [46], 'single-': [47], 'multi-power': [49], 'pulse': [50], 'operations': [51], 'terms': [53], 'substrate': [56], 'dimensions.': [57]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2122923768', 'counts_by_year': [], 'updated_date': '2024-12-08T11:03:03.996714', 'created_date': '2016-06-24'}