Title: The effect of frictional stress on the calculation of critical thickness in epitaxy
Abstract:A critical-thickness model is proposed for lattice-mismatched epitaxial layers which incorporates for the first time both the equilibrium and kinetic components of misfit accommodation. The model is a...A critical-thickness model is proposed for lattice-mismatched epitaxial layers which incorporates for the first time both the equilibrium and kinetic components of misfit accommodation. The model is an attempt to provide a physical basis for the discrepancy between the observed and calculated critical thickness in zinc-blende semiconductors. The equilibrium components of the model use a force balance and a Volterra description of the dislocation line tension with frictional forces includiing Peierls barriers and dislocation atmospheres. The effect of the frictional forces is to shift the critical thickness to a larger value and to produce a residual elastic strain which persists for large thicknesses. The frictional barriers are low in face-centered-cubic metals and produce minor changes from the previous theories; however, for semiconductors the frictional forces may be high and produce a substantial increase in the predicted critical thickness. The kinetic component of misfit accommodation has been addressed through a dynamic frictional force. The explicit form of the kinetic component of misfit accommodation depends on the operative mechanism of misfit-dislocation generation. A simple criterion is proposed to estimate whether the generation of misfit dislocations will be controlled by equilibrium or kinetic factors.Read More
Publication Year: 1990
Publication Date: 1990-09-15
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 72
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